Temperature-dependent stacking fault energies of 4H-SiC: A first-principles study
The stacking fault (SF) energy of 4H-SiC around room temperature is important for the
quantitative investigation of bipolar degradation, which is a serious issue in 4H-SiC bipolar
power devices. However, the experimental measurement of SF energy around room
temperature is very difficult. We have theoretically estimated the dependence of 4H-SiC SF
energy on temperature using a calculation of the free energy of phonons based on ab initio
calculations. Calculations using both the harmonic vibration approximation and quasi …
quantitative investigation of bipolar degradation, which is a serious issue in 4H-SiC bipolar
power devices. However, the experimental measurement of SF energy around room
temperature is very difficult. We have theoretically estimated the dependence of 4H-SiC SF
energy on temperature using a calculation of the free energy of phonons based on ab initio
calculations. Calculations using both the harmonic vibration approximation and quasi …
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