The paper deals with the fundamentals of the theory of photoreactive effect in bipolar and
field-effect transistor structures. Photoreactive properties of semiconductor devices are
widely used in a variety of radio electronics devices. Therefore, the study of these
phenomena in bipolar transistor structures with negative resistance, allows us to create new
sensory devices, which have better parameters than existing ones. The method of
construction of radiomeasuring microelectronic transducers is offered on the base of …