High-performance thin-film transistors (TFTs) based on new materials have been
investigated to achieve the features of larger diagonal size, greater transparency, more
mechanical robustness, more pixels, and lighter weight for high-resolution electronic display
devices [1, 2]. Conventional amorphous silicon (a-Si)-based TFTs have a few shortcomings,
such as reduced pixel brightness due to opaque a-Si and an undesirable off-state leakage
current due to the use of optical shields [3]. In addition, a-Si TFTs requires higher field effect …

This study demonstrates that nanocrystalline TiO2 thin films were deposited on ITO/glass
substrate by radio-frequency magnetron sputtering. Field-emission scanning electron
microscope (FE-SEM) and atomic force microscopic (AFM) images showed the morphology
of TiO2 channel layer with grain size and root-mean-square (RMS) roughness of 15 and
5.39 nm, respectively. TiO2 thin-film transistors (TFTs) with sputter-SiO2 gate dielectric layer
were also fabricated. It was found that the devices exhibited enhancement mode …