We report on thulium-doped waveguide amplifiers integrated on a low-loss silicon nitride
platform. The amplifier structure consists of a thulium-doped tellurium oxide thin film coated
on a silicon nitride strip waveguide on silicon. We determine a waveguide background loss
of 0.7 dB/cm at 1479 nm based on the quality factor measured in microring resonators. Gain
measurements were carried out in straight and 6.7-cm-long s-bend waveguides realized on
a 2.2-cm-long chip. We measure internal net gain over the wavelength range 1860–2000 …

Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net gain on a silicon nitride
chip: publisher’s note … Thulium-doped tellurium oxide waveguide amplifier with 7.6 dB net
gain on a silicon nitride chip: publisher’s note … AND J DB B 1 …