Transport properties of chemically synthesized MoS2–Dielectric effects and defects scattering
M Mongillo, D Chiappe, G Arutchelvan… - Applied Physics …, 2016 - pubs.aip.org
We report on the electrical characterization of synthetic, large-area MoS 2 layers obtained by
the sulfurization technique. The effects of dielectric encapsulation and localized defect states
on the intrinsic transport properties are explored with the aid of temperature-dependent
measurements. We study the effect of dielectric environment by transferring as-grown MoS 2
films into different dielectrics such as SiO 2, Al 2 O 3, HfO 2, and ZrO 2 with increasing
dielectric permittivity. Electrical data are collected on a statistically-relevant device ensemble …
the sulfurization technique. The effects of dielectric encapsulation and localized defect states
on the intrinsic transport properties are explored with the aid of temperature-dependent
measurements. We study the effect of dielectric environment by transferring as-grown MoS 2
films into different dielectrics such as SiO 2, Al 2 O 3, HfO 2, and ZrO 2 with increasing
dielectric permittivity. Electrical data are collected on a statistically-relevant device ensemble …
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