We have proposed and fabricated high performance of AlGaN/GaN Schottky Barrier Diodes
(SBDs) with various Schottky contact. The breakdown voltage of proposed SBDs with the
TaN and ITO Schottky contact deposited by RF sputtering method was increased compared
to the widely used Ni/Au Schottky contact. The extracted Schottky barrier height (SBH) of
TaN and ITO was 0.62 eV and 0.54 eV respectively while that of Ni/Au was 0.51 eV. The
reverse blocking characteristics such as the leakage current and breakdown voltage was …

AlGaN/GaN Schottky barrier diodes (SBDs) have attracted an attention for next-generation
power devices due to wide bandgap properties such as a high critical electric field and a low
intrinsic carrier concentration. In addition, a low on-resistance by two dimensional electron
gases attributes a fast switching speed [1-2]. Ni based Schottky metals have been widely
used for an anode of the AlGaN/GaN SBDs due to a high work function and a good
adhesion with GaN materials. However, Ni is easily oxidized so that thick Au on the Ni is …