AlGaN-channel high electron mobility transistors (HEMTs) were operated as visible-and
solar-blind photodetectors by using GaN nanodots as an optically active floating gate. The
effect of the floating gate was large enough to switch an HEMT from the off-state in the dark
to an on-state under illumination. This opto-electronic response achieved responsivity> 10^
8 A/W at room temperature while allowing HEMTs to be electrically biased in the off-state for
low dark current and low DC power dissipation. The influence of GaN nanodot distance from …

… Visible and Solar-Blind Photodetectors Using AIGaN High Electron Mobility Transistors with
Nanodot-Based Floating Gate … Needs for UV photodetection AIGaN quantum dot floating
gate HEMT vis-blind photodetectors Impact of quantum dot placement Extension to solar-blind
detection Summary … Nanodot HEMT exhibits larger S and f than AIGaN MESFETs1 or
AIGaN MSM2 devices Important to note that MSM and MESFET devices were solar-blind
Next step is to increase nanodot HEMT channel composition to achieve solar-blind detection …