Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device applications
Graphene with varying number of layers is explored as metal gate electrode in metal oxide
semiconductor structure by inserting it between the dielectric (SiO 2) and contact metal (TiN)
and results are compared with TiN gate electrode. We demonstrate an effective work
function tuning of gate electrode upto 0.5 eV by varying the number of graphene layers.
Inclusion of even 1-3 layers of graphene results in significantly improved dielectric reliability
as measured by breakdown characteristics, charge to breakdown, and interface state …
semiconductor structure by inserting it between the dielectric (SiO 2) and contact metal (TiN)
and results are compared with TiN gate electrode. We demonstrate an effective work
function tuning of gate electrode upto 0.5 eV by varying the number of graphene layers.
Inclusion of even 1-3 layers of graphene results in significantly improved dielectric reliability
as measured by breakdown characteristics, charge to breakdown, and interface state …
Erratum:“Work function tuning and improved gate dielectric reliability with multilayer graphene as a gate electrode for metal oxide semiconductor field effect device …
Important typographic error in the last paragraph of page 4, in the line “Ti-N has a bond
length of about 1.57 Aand Ti and N have atomic diameters of 2.84 nm and 1.36 nm,
respectively” is identified. In this line, Ti and N atomic diameters are written in nanometers,
while the units should be in Angstroms. These changes in the units of atomic diameter would
not affect the conclusions of the paper. 1
length of about 1.57 Aand Ti and N have atomic diameters of 2.84 nm and 1.36 nm,
respectively” is identified. In this line, Ti and N atomic diameters are written in nanometers,
while the units should be in Angstroms. These changes in the units of atomic diameter would
not affect the conclusions of the paper. 1
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