Analysis of the microstructure of silicon quantum dot superlattice embedded microcrystalline silicon carbide for solar cell application
We have recently demonstrated [1] pin structure diodes with the intrinsic (i) layers
comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon …
comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon …
Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application
We have systematically studied a series of silicon carbide multilayer (# SiC) samples, each
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC …
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC …
Photovoltaic properties of silicon nanocrystals in silicon carbide
Silicon nanocrystal quantum dots in a dielectric matrix form a material with higher band gap
than silicon, but still compatible with silicon technology. So far, devices using silicon …
than silicon, but still compatible with silicon technology. So far, devices using silicon …
Microcrystalline silicon carbide window layers in thin film silicon solar cells
T Chen, Y Huang, A Dasgupta, M Luysberg… - Solar Energy Materials …, 2012 - Elsevier
Crystalline silicon carbide alloys have a very high potential to be used as transparent
conductive window layers in thin-film solar cells provided they can be prepared in thin-film …
conductive window layers in thin-film solar cells provided they can be prepared in thin-film …
In situ grown size-controlled silicon nanocrystals: A p type nanocrystalline-Si: H/a-SiCx: H superlattice (p-nc-Si: H/a-SiCx: H) approach
J Ma, J Ni, J Zhang, Q Liu, G Hou, X Chen… - Solar energy materials …, 2014 - Elsevier
In situ grown p-nc-Si: H/a-SiC x: H quantum dot superlattice has been prepared by RF-
PECVD at a low temperature of 150° C using layer by layer technique. This preparation …
PECVD at a low temperature of 150° C using layer by layer technique. This preparation …
Silicon nanocrystals in carbide matrix
C Summonte, M Allegrezza, M Bellettato… - Solar energy materials …, 2014 - Elsevier
Ordered silicon nanocrystals in silicon carbide are produced by Plasma Enhanced Chemical
Vapor Deposition by means of the multilayer approach followed by annealing at 1100° C …
Vapor Deposition by means of the multilayer approach followed by annealing at 1100° C …
Highly transparent microcrystalline silicon carbide grown with hot wire chemical vapor deposition as window layers in nip microcrystalline silicon solar cells
Y Huang, A Dasgupta, A Gordijn, F Finger… - Applied Physics …, 2007 - pubs.aip.org
Y. Huang, A. Dasgupta, A. Gordijn, F. Finger, R. Carius; Highly transparent microcrystalline
silicon carbide grown with hot wire chemical vapor deposition as window layers in nip …
silicon carbide grown with hot wire chemical vapor deposition as window layers in nip …
Preparation of microcrystalline silicon solar cells on microcrystalline silicon carbide window layers grown with HWCVD at low temperature
Y Huang, T Chen, A Gordijn, A Dasgupta… - Journal of non …, 2008 - Elsevier
N-type microcrystalline silicon carbide layers prepared by hot-wire chemical vapor
deposition were used as window layers for microcrystalline silicon n–i–p solar cells. The …
deposition were used as window layers for microcrystalline silicon n–i–p solar cells. The …
Silicon quantum dots thin films and superlattice in SiC matrix by co-sputtering of silicon and carbon
Silicon quantum dots (QDs) thin films and superlattice embedded in SiC matrix are prepared
by co-sputtering of pure Si and C targets for all silicon tandem solar cell application. The …
by co-sputtering of pure Si and C targets for all silicon tandem solar cell application. The …
Nanocrystalline silicon in amorphous silicon carbide matrix for si quantum dots superlattice
We have successfully prepared silicon quantum dots/amorphous silicon carbide multilayers
by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC …
by thermal annealing of stoichiometric hydrogenated amorphous silicon carbide (a-SiC …