Four-hexagonal polytype films of nanocrystalline silicon carbide (4H-nc-SiC) were deposited
by plasma enhanced chemical vapor deposition method with more than 3× 104 Wm− 2 …

Thin films of nanocrystalline silicon carbide (nc-SiC) were deposited by a modified plasma-
enhanced chemical vapor deposition. The source gases were silane, methane and …

Nanocrystalline silicon carbide (nc-SiC) thin films have been grown on silicon (100)
substrates by helicon wave plasma enhanced chemical vapor deposition technique and the …

Cubic nanocrystalline silicon carbide (3C-SiC) films have been deposited by using the hot
wire chemical vapor deposition (HW-CVD) method at a low substrate temperature and at …

Silicon carbide films with different carbon concentrations x C have been synthesized by
inductively coupled plasma chemical vapor deposition from a SiH 4/CH 4/H 2 gas mixture at …

Nanocrystalline cubic silicon carbide (3C–SiC) thin films have been successfully prepared
on glass substrates (at a low temperature of around 325 C) by hot-wire chemical vapor …

Nanocrystalline cubic silicon carbide (3C–SiC) films embedded in an amorphous SiC matrix
were fabricated by the hot-filament chemical-vapor-deposition technique using methane and …

We have successfully deposited nanocrystalline cubic silicon carbide (nc-3C-SiC: H) films at
a low substrate temperature of 360 C by very high-frequency plasma-enhanced chemical …

Effects of deposition conditions on the structure of microcrystalline silicon carbide (μc-SiC)
films prepared by hot-wire chemical vapor deposition (hot-wire CVD) method have been …

The optical and photoluminescence (PL) properties of nanocrystalline 3C-SiC films and the
effect of the boundary regions between the nanocrystals were studied for two sets of films:(a) …