In this work, we compare the results obtained when with different etching current densities
(6, 13, 20, 27, and 34) mA/cm 2 on Structural, morphological; Raman, and …

Morphological and optical properties of porous silicon (PS) layer fabricated on n-type silicon
wafer have been reported in the present article. Method of PS fabrication is by photo …

Porous silicon (PS) prepared from n-type silicon via photoelectrochemical etching (PECE)
technique. The morphology properties of PS specimens that formed with different etching …

In this work, an attempt has been made to fabricate porous silicon (PS) from p-type
crystalline silicon (c-Si) wafers by using the electrochemical etching process at six different …

The current study aimed to produce Si nanostructures ultra-high sensitivity photodetector by
photo electrochemical method. The effect of changing some factors on the formation of …

In this article effect of etching current density (J) on the microstructural, optical and electrical
properties of photoelectrochemically prepared heterostructure is reported. Prepared …

Porous silicon (PS) layers are prepared by anodization for etching time densities. The
samples are then characterized the nanocrystalline porous silicon layer by X-Ray Diffraction …

The morphology of porous silicon (PS) layers produced by electrochemical etching of n-type
(100) silicon (Si) at different low current densities was studied using SEM, image J analysis …

Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation.
SEM, FTIR and PL have been used to characterize the morphological and optical properties …

Recently, porous silicon (PS) was intensely studied by researcher due to its
photoluminescence (PL), which has potential application in optoelectronic devices and …