Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation.
SEM, FTIR and PL have been used to characterize the morphological and optical properties …

Morphological and optical properties of porous silicon (PS) layer fabricated on n-type silicon
wafer have been reported in the present article. Method of PS fabrication is by photo …

The optical properties of porous silicon (PS) samples fabricated by pulse etching in a
temperature range from− 40 to 50 C have been investigated using reflectance spectroscopy …

Porous silicon layers have been prepared from n-type silicon wafers of (111) orientation.
XRD, AFM, reflectivity and PL have been used to characterize the structural, morphological …

Silicon-on insulator (SOI) wafers, consisting of 22μm thick p-type silicon epitaxial layer
grown on 280μm thick n-type (111) silicon substrate, were electrochemically etched in …

Porous silicon (PS) samples were fabricated by pulse current etching using different times.
The downward uniformity and optical properties of the PS layers have been investigated …

Porous silicon (PS) has been prepared from n-type (100) silicon substrate by using
electrochemical etching under He-Ne laser illumination. The PS was produced within …

The optical studies of n-type porous silicon prepared by the photo-assisted chemical etching
are reported here. The optical properties of samples obtained under different conditions …

In the present paper, several samples of porous silicon monolayers and multilayers were
prepared at different anodization conditions with fixed HF concentration. The room …

Porous silicon (PS) structures are prepared by electrochemical etching method using HF
and ethanol as a electrolyte solution. The surface and cross‐sectional morphology and …