Structure and electronic properties of μc-SiC: H for photovoltaic applications

A Heidt, T Chen, R Carius, F Finger… - Journal of Physics …, 2011 - iopscience.iop.org
Thin microcrystalline silicon carbide films (μc-SiC: H) were grown by the hot-wire deposition
technique for implementation as a window layer into thin-film solar cells. The μc-SiC: H …

[PDF][PDF] Microcrystalline silicon carbide for silicon heterojunction solar cells

MB Pomaska - 2017 - scholar.archive.org
N-type microcrystalline silicon carbide (c-SiC: H (n)) is a promising material for the doped
layer on the illuminated side of silicon heterojunction (SHJ) solar cells, because it o ers a …

Microcrystalline silicon carbide thin films grown by HWCVD at different filament temperatures and their application in nip microcrystalline silicon solar cells

T Chen, Y Huang, H Wang, D Yang, A Dasgupta… - Thin Solid Films, 2009 - Elsevier
To optimize the performance of microcrystalline silicon carbide (µc-SiC: H) window layers in
nip type microcrystalline silicon (µc-Si: H) solar cells, the influence of the rhenium filament …

Structural characterization of superlattice of microcrystalline silicon carbide layers for photovoltaic application

P Chaudhuri, A Kole, G Haider - Journal of Applied Physics, 2013 - pubs.aip.org
We have systematically studied a series of silicon carbide multilayer (# SiC) samples, each
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC …

Nanocrystalline silicon carbide films for solar photovoltaics: The role of dangling-bond defects

KS Lim, O Shevaleevskiy - Pure and Applied Chemistry, 2008 - degruyter.com
Thin films of microcrystalline hydrogenated silicon (µc-Si: H) and nanocrystalline silicon
carbide (nc-SiC: H) provide a new class of advanced nanostructured materials for solar …

Role of oxygen and nitrogen in n-type microcrystalline silicon carbide grown by hot wire chemical vapor deposition

M Pomaska, J Mock, F Köhler, U Zastrow… - Journal of Applied …, 2016 - pubs.aip.org
N-type microcrystalline silicon carbide (μc-SiC: H (n)) deposited by hot wire chemical vapor
deposition provides advantageous opto-electronic properties for window layer material in …

Hot-wire chemical vapor deposition prepared aluminum doped p-type microcrystalline silicon carbide window layers for thin film silicon solar cells

T Chen, F Köhler, A Heidt, R Carius… - Japanese journal of …, 2014 - iopscience.iop.org
Al-doped p-type microcrystalline silicon carbide (µc-SiC: H) thin films were deposited by hot-
wire chemical vapor deposition at substrate temperatures below 400 C. Monomethylsilane …

Microcrystalline silicon carbide window layers in thin film silicon solar cells

T Chen, Y Huang, A Dasgupta, M Luysberg… - Solar Energy Materials …, 2012 - Elsevier
Crystalline silicon carbide alloys have a very high potential to be used as transparent
conductive window layers in thin-film solar cells provided they can be prepared in thin-film …

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

F Finger, O Astakhov, T Bronger, R Carius, T Chen… - Thin Solid Films, 2009 - Elsevier
Crystalline silicon carbide alloys have a very high potential as transparent conductive
window layers in thin-film solar cells provided they can be prepared in thin-film form and at …

Structural analysis of nanocrystalline SiC thin films grown on silicon by ECR plasma CVD

SJ Toal, HS Reehal, SJ Webb, NP Barradas, C Jeynes - Thin solid films, 1999 - Elsevier
Wide bandgap emitters on crystalline substrates are an active area of research for use in
heterojunction silicon solar cells. We have deposited high conductivity SiC containing large …