We have systematically studied a series of silicon carbide multilayer (# SiC) samples, each
consisting of 30 periods of two alternating layers of microcrystalline silicon carbide (μc-SiC …

Thin microcrystalline silicon carbide films (μc-SiC: H) were grown by the hot-wire deposition
technique for implementation as a window layer into thin-film solar cells. The μc-SiC: H …

Wide-bandgap, high-quality p-type microcrystalline silicon carbide (p-µc-SiC) films have
been prepared by radio frequency plasma-enhanced chemical vapor deposition (RF …

Crystalline silicon carbide alloys have a very high potential to be used as transparent
conductive window layers in thin-film solar cells provided they can be prepared in thin-film …

We have recently demonstrated [1] pin structure diodes with the intrinsic (i) layers
comprising of periodic depositions of silicon quantum dot embedded microcrystalline silicon …

Crystalline silicon carbide alloys have a very high potential as transparent conductive
window layers in thin-film solar cells provided they can be prepared in thin-film form and at …

Al-doped p-type microcrystalline silicon carbide (µc-SiC: H) thin films were deposited by hot-
wire chemical vapor deposition at substrate temperatures below 400 C. Monomethylsilane …

The n-type microcrystalline cubic silicon carbide (µc-3C–SiC: H) films were deposited by hot
wire chemical vapor deposition (HWCVD) at a low substrate temperature (∼ 300 C) …

Four-hexagonal polytype films of nanocrystalline silicon carbide (4H-nc-SiC) were deposited
by plasma enhanced chemical vapor deposition method with more than 3× 104 Wm− 2 …

Nanocrystalline silicon carbide (nc-SiC) thin films have been grown on silicon (100)
substrates by helicon wave plasma enhanced chemical vapor deposition technique and the …