In this paper we derive the I–V characteristics of Schottky contacts based on bulk metal to
semiconductor quantum wires interfaces. The obtained results show that quantum …

This paper deals with the modeling of the electronic characteristics of semiconductor
devices based on Schottky contacts in low-dimensional systems. For the capacitance …

The capacitance-voltage (CV) characteristics of multiple-quantum-well (MQW)
semiconductor heterostructures are studied using a proposed numerical model. The MQW …

This paper discusses the modeling and experimental results for a new family of electronic
devices in which a Schottky metal is placed in direct contact to a low dimensionality structure …

We have studied the dependence of Schottky junction (I–V) characteristics on the metal
contact size in metal–semiconductor (M–S) junctions using different metal nanoprobe sizes …

The electrical properties of nanometer-sized Schottky contacts formed on n-GaAs and n-InP
substrates by an in situ electrochemical process were studied both experimentally and …

We have studied the conductance of nanoscale junctions created at a metal-semiconductor
interface by the break-junction technique. The conductance traces of the nanojunctions …

Metal contacts in semiconductor quantum electronic devices can offer advantages over
doped contacts, primarily due to their reduced fabrication complexity and lower temperature …

In this work, we investigated W/p-type Si Schottky contacts with intentional inhomogeneities
beneath the interface. These inhomogeneities are related to the presence of Ge-dots located …

The electrical behavior of metal–semiconductor–metal MSM Schottky barrier photodiode
structures is analyzed by means of current–voltage measurements at different temperatures …