In this article effect of etching current density (J) on the microstructural, optical and electrical
properties of photoelectrochemically prepared heterostructure is reported. Prepared …

Morphological and optical properties of porous silicon (PS) layer fabricated on n-type silicon
wafer have been reported in the present article. Method of PS fabrication is by photo …

The morphology of porous silicon (PS) layers produced by electrochemical etching of n-type
(100) silicon (Si) at different low current densities was studied using SEM, image J analysis …

In this work, we compare the results obtained when with different etching current densities
(6, 13, 20, 27, and 34) mA/cm 2 on Structural, morphological; Raman, and …

In this work, an attempt has been made to fabricate porous silicon (PS) from p-type
crystalline silicon (c-Si) wafers by using the electrochemical etching process at six different …

Effects of current density on nanostructure and light emitting properties of porous silicon (PS)
samples were investigated by field emission scanning electron microscope (FE-SEM) …

In this study, porous silicon thin films with different etching time (10 and 13 minutes) were
successfully fabricated on both n-and p-type silicon substrate using electrochemical etching …

In this manuscript, the nano and micro porous silicon was prepared using the
electrochemical etching method. Different current density was employed in this report …

The effect of using different electrolytes in the physical and optical properties of porous
silicon was studied. To do this porous silicon (PS) samples photoluminescent in the visible …

The dependence of porous silicon (PS) morphology on fabrication conditions using
electrochemical etching (ECE) was investigated. The porosity of the material is determined …