[图书][B] Development of wide-band gap indium gallium nitride solar cells for high-efficiency photovoltaics

OK Jani - 2008 - search.proquest.com
Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4–
2.9 eV range that can be an integral component of photovoltaic devices to achieve …
被引用次数：41 相关文章

[引用][C] DEVELOPMENT OF WIDE-BAND GAP InGaN SOLAR CELLS FOR HIGH-EFFICIENCY PHOTOVOLTAICS

OK JANI - Ph. D. thesis, Georgia Inst. Tech., 2008 - cir.nii.ac.jp
[PDF] core.ac.uk

[PDF][PDF] DEVELOPMENT OF WIDE-BAND GAP InGaN SOLAR CELLS FOR HIGH-EFFICIENCY PHOTOVOLTAICS

OK Jani - 2008 - core.ac.uk
I would like to thank Dr. Alan Doolittle for his technical insight, and Elaissa Trybus and
Walter Henderson for their hands-on support. I would also like to thank Dr. Ajeet Rohatgi, Dr …
[PDF] academia.edu

[PDF][PDF] DEVELOPMENT OF WIDE-BAND GAP InGaN SOLAR CELLS FOR HIGH-EFFICIENCY PHOTOVOLTAICS

OK Jani - 2008 - academia.edu
I would like to thank Dr. Alan Doolittle for his technical insight, and Elaissa Trybus and
Walter Henderson for their hands-on support. I would also like to thank Dr. Ajeet Rohatgi, Dr …

Development of wide-band gap indium gallium nitride solar cells for high-efficiency photovoltaics

OK Jani - Ph. D. Thesis, 2008 - ui.adsabs.harvard.edu
Main objective of the present work is to develop wide-band gap InGaN solar cells in the 2.4--
2.9 eV range that can be an integral component of photovoltaic devices to achieve …