We report a pyrometer that operates at a mid-infrared wavelength range (7–8μm), where
sapphire substrates are opaque and the reactant gases are transparent. The pyrometer also …

We developed a pyrometer that operates near the high-temperature bandgap of GaN, thus
solving the transparency problem once a∼ 1μm thick GaN epilayer has been established …

In situ characterization techniques are necessary tools in modern MOCVD equipment within
both the research and production environments. In this paper, we describe two recently …

In this work we report the first quasi-continuous in-situ photoluminescence study of growing
InGaN LED structures inside an industrial-grade metal-organic vapor phase epitaxy …

We report on the use of in-situ optical sensors during the MOVPE of GaN for determining the
growth temperatures and the growth rates over the temperature ranges employed for …

We employed a newly developed wafer-selective curvature, reflectance and temperature
sensor (EpiCurveTT®) in an AIX2600HT Planetary Reactor®. Growth of GaN on sapphire as …

The recent development of a commercial band-gap thermometry system for wide band-gap
materials such as GaN (the k-Space Associates'“BandiTTM”) has allowed a systematic study …

We report growth of InGaN/GaN multi-quantum well (MQW) and LED structures on a novel
composite substrate designed to eliminate the coefficient of thermal expansion (CTE) …

In this letter we report the results of room-temperature continuous wave and pulsed
photoluminescence measurements on InGaN–GaN single heterojunctions. These InGaN …

Epitaxy of high-quality GaN on sapphire requires a rather sophisticated substrate
preparation prior to the GaN epilayer growth, namely nitridation of the substrate's surface …