Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
M Asif Khan, JN Kuznia, DT Olson, WJ Schaff… - Applied Physics …, 1994 - pubs.aip.org
We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
MA Khan, JN Kuznia, DT Olson, WJ Schaff… - Applied Physics …, 1994 - cir.nii.ac.jp
抄録< jats: p> We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect
transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room …
transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room …
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
M Asif Khan, JN Kuznia, DT Olson… - Applied Physics …, 1994 - ui.adsabs.harvard.edu
We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …
Microwave performance of a 0.25 pm gate AIGaN/GaN heterostructure field effect transistor
MA Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm… - Appl. Phys. Lett, 1994 - pubs.aip.org
We fabricated a 0.25, um gate length AlGaN/GaN heterostructure field effect transistor
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …
[引用][C] Microwave Performance of a 0.25 μm Gate AlGaN/GaN Heterostructure Field Effect Transistor
MA KHAN - Appl. Phys. Lett., 1994 - cir.nii.ac.jp
Microwave Performance of a 0.25 μm Gate AlGaN/GaN Heterostructure Field Effect Transistor
| CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …
| CiNii Research CiNii 国立情報学研究所 学術情報ナビゲータ[サイニィ] 詳細へ移動 検索フォームへ …
[引用][C] Microwave performance of a 0.25 µm gate AlGaN/GaN heterostructure field effect transistor
MA Khan, JN Kuznia, DT Olson… - Applied Physics …, 1994 - ui.adsabs.harvard.edu
Microwave performance of a 0.25 µm gate AlGaN/GaN heterostructure field effect transistor -
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Microwave …
NASA/ADS Now on home page ads icon ads Enable full ADS view NASA/ADS Microwave …