Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M Asif Khan, JN Kuznia, DT Olson, WJ Schaff… - Applied Physics …, 1994 - pubs.aip.org
We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

MA Khan, JN Kuznia, DT Olson, WJ Schaff… - Applied Physics …, 1994 - cir.nii.ac.jp
抄録< jats: p> We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect
transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room …

Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor

M Asif Khan, JN Kuznia, DT Olson… - Applied Physics …, 1994 - ui.adsabs.harvard.edu
We fabricated a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …

Microwave performance of a 0.25 pm gate AIGaN/GaN heterostructure field effect transistor

MA Khan, JN Kuznia, DT Olson, WJ Schaff, JW Burm… - Appl. Phys. Lett, 1994 - pubs.aip.org
We fabricated a 0.25, um gate length AlGaN/GaN heterostructure field effect transistor
(HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) …

[引用][C] Microwave Performance of a 0.25 μm Gate AlGaN/GaN Heterostructure Field Effect Transistor

MA KHAN - Appl. Phys. Lett., 1994 - cir.nii.ac.jp
Microwave Performance of a 0.25 μm Gate AlGaN/GaN Heterostructure Field Effect Transistor
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[引用][C] Microwave performance of a 0.25 µm gate AlGaN/GaN heterostructure field effect transistor

MA Khan, JN Kuznia, DT Olson… - Applied Physics …, 1994 - ui.adsabs.harvard.edu
Microwave performance of a 0.25 µm gate AlGaN/GaN heterostructure field effect transistor -
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[引用][C] MICROWAVE PERFOMANCE OF A 0.25 MU M GATE ALGAN

M ASIF KHAN, JN KUZNIA… - Applied …, 1994 - American Institute of Physics