Is it the end of the road for silicon in power conversion?
A Lidow - 2010 6th International Conference on Integrated …, 2010 - ieeexplore.ieee.org
For the past three decades, power management efficiency and cost have shown steady
improvement as innovations in power MOSFET structures, technology, and circuit topologies …
improvement as innovations in power MOSFET structures, technology, and circuit topologies …
GaN as a displacement technology for silicon in power management
A Lidow - 2011 ieee energy conversion congress and …, 2011 - ieeexplore.ieee.org
For the past three decades, power management efficiency and cost have shown steady
improvement as innovations in power MOSFET structures, technology, and circuit topologies …
improvement as innovations in power MOSFET structures, technology, and circuit topologies …
GaN: A Reliable Future in Power Conversion: Dramatic performance improvements at a lower cost
For the first time in 60 years, a new, higher-performance technology is less expensive to
produce than its silicon counterpart. Gallium nitride (GaN), grown as a thin layer on top of a …
produce than its silicon counterpart. Gallium nitride (GaN), grown as a thin layer on top of a …
GaN transistors—Giving new life to Moore's Law
A Lidow - 2015 IEEE 27th International Symposium on Power …, 2015 - ieeexplore.ieee.org
Enhancement-mode gallium nitride transistors have been commercially available for over
five years and have infiltrated many applications previously monopolized by the aging …
five years and have infiltrated many applications previously monopolized by the aging …
Recent advances in GaN power electronics
Gallium Nitride power devices are poised to replace silicon-based MOSFETs in power
switching applications having weight and volume constraints, while simultaneously needing …
switching applications having weight and volume constraints, while simultaneously needing …
GaN power IC technology: Past, present, and future
D Kinzer - 2017 29th International Symposium on Power …, 2017 - ieeexplore.ieee.org
Gallium Nitride is an emerging technology that is enabling major advances in power
electronics. Power integrated circuits are now emerging in the market and showing …
electronics. Power integrated circuits are now emerging in the market and showing …
Power devices on bulk gallium nitride substrates: An overview of ARPA-E's SWITCHES program
TD Heidel, P Gradzki - 2014 IEEE International Electron …, 2014 - ieeexplore.ieee.org
Wide bandgap power semiconductor devices offer substantial energy efficiency
opportunities in a wide range of applications. However, to date, relatively high cost has …
opportunities in a wide range of applications. However, to date, relatively high cost has …
Gallium nitride devices for power electronic applications
BJ Baliga - Semiconductor Science and Technology, 2013 - iopscience.iop.org
Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has
made this technology a contender for power electronic applications. This paper discusses …
made this technology a contender for power electronic applications. This paper discusses …
GaN power electronics for automotive application
KS Boutros, R Chu, B Hughes - 2012 IEEE Energytech, 2012 - ieeexplore.ieee.org
Gallium Nitride power devices are poised to replace silicon-based MOSFETs and IGBTs in
automotive power switching applications. With its projected 100× performance advantage …
automotive power switching applications. With its projected 100× performance advantage …
GaN-on-Si power technology: Devices and applications
In this paper, we present a comprehensive review and discussion of the state-of-the-art
device technology and application development of GaN-on-Si power electronics. Several …
device technology and application development of GaN-on-Si power electronics. Several …