Surface termination control in chemically deposited PbS films: nucleation and growth on GaAs (111) A and GaAs (111) B
A Osherov, M Matmor, N Froumin… - The Journal of …, 2011 - ACS Publications
This study addresses the question of whether chemically deposited PbS thin films grown on
GaAs (111) are affected by the oppositely terminated substrate surfaces, gallium terminated …
GaAs (111) are affected by the oppositely terminated substrate surfaces, gallium terminated …
Surface termination control in chemically deposited PbS films: Nucleation and growth on GaAs (111) A and GaAs (111) B
A Osherov, M Matmor, N Froumin… - Journal of Physical …, 2011 - cris.bgu.ac.il
This study addresses the question of whether chemically deposited PbS thin films grown on
GaAs (111) are affected by the oppositely terminated substrate surfaces, gallium terminated …
GaAs (111) are affected by the oppositely terminated substrate surfaces, gallium terminated …
[引用][C] Surface Termination Control in Chemically Deposited PbS Films: Nucleation and Growth on GaAs (111) A and GaAs (111) B
A Osherov, M Matmor, N Froumin, N Ashkenasy… - The Journal of Physical …, 2011 - infona.pl
Surface Termination Control in Chemically Deposited PbS Films: Nucleation and Growth on
GaAs(111)A and GaAs(111)B × Close The Infona portal uses cookies, ie strings of text saved …
GaAs(111)A and GaAs(111)B × Close The Infona portal uses cookies, ie strings of text saved …