Residual stresses and their distribution within individual layers are a general concern in thin
film technology. Here we use a recently developed ion beam layer removal method to …

A recently developed ion beam layer removal method allows the precise determination of
complex depth profiles of residual stresses in crystalline and in amorphous thin films on a …

Residual stresses and stress gradients are of great importance in all thin film systems, as
they critically influence the structural stability and functionality, and thus the lifetime, of the …

A new method for the in situ measurement of the residual stresses, σR, in thin films,
thickness h, is described. It is based on the combined capability of the focused ion beam …

Recently, a new method for residual stress measurement in thin films by using the focused
ion beam (FIB) has been proposed by the authors. It is based on the combined capability of …

A focused ion beam technique that allows the characterization of spatial residual stresses in
near-surface structures with a depth resolution on the nanoscale and a lateral resolution in …

Residual stress evaluation in thin films at the sub-micron scale was achieved in the present
study using a semi-destructive trench-cutting (ring-core) method. Focused Ion Beam was …

The focused ion beam (FIB) technique is a versatile tool for nanoscale manipulation,
deposition and etching. However, degradation mechanisms which lead to residual stresses …

An improved stress-measuring technique based on the cantilever bending principle is
presented. Any thermal shift of the sample holder position that results in errors in the stress …

Combining the traditional layer-removal method with a cantilever beam model, a modified
layer-removal method is developed and used to measure residual stress in single and multi …