Voltage induction of interfacial Dzyaloshinskii–Moriya interaction in Au/Fe/MgO artificial multilayer
Abstract The Dzyaloshinskii–Moriya interaction (DMI) is an antisymmetric exchange
interaction that plays a decisive role in the formation of chiral magnetic structures and in the …
interaction that plays a decisive role in the formation of chiral magnetic structures and in the …
Electrical field enhanced interfacial Dzyaloshinskii-Moriya interaction in MgO/Fe/Pt system
W Zhang, H Zhong, R Zang, Y Zhang, S Yu… - Applied Physics …, 2018 - pubs.aip.org
We report electric field control of the interfacial Dzyaloshinskii-Moriya interaction (DMI) in
MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light …
MgO/Fe/Pt multilayers. The interfacial DMI is obtained and quantified by Brillouin light …
All-electrical measurement of interfacial Dzyaloshinskii-Moriya interaction using collective spin-wave dynamics
Dzyaloshinskii-Moriya interaction (DMI), which arises from the broken inversion symmetry
and spin–orbit coupling, is of prime interest as it leads to a stabilization of chiral magnetic …
and spin–orbit coupling, is of prime interest as it leads to a stabilization of chiral magnetic …
Electric dipole moment as descriptor for interfacial Dzyaloshinskii-Moriya interaction
H Jia, B Zimmermann, G Michalicek, G Bihlmayer… - Physical Review …, 2020 - APS
Chiral magnets are of fundamental interest and have important technological ramifications.
The origin of chiral magnets lies in the Dzyaloshinskii-Moriya interaction (DMI), an …
The origin of chiral magnets lies in the Dzyaloshinskii-Moriya interaction (DMI), an …
Quantitative accordance of Dzyaloshinskii-Moriya interaction between domain-wall and spin-wave dynamics
DY Kim, NH Kim, YK Park, MH Park, JS Kim, YS Nam… - Physical Review B, 2019 - APS
The magnetic exchange interaction is one of the key factors governing the basic
characteristics of magnetic systems. In contrast to the symmetric nature of the Heisenberg …
characteristics of magnetic systems. In contrast to the symmetric nature of the Heisenberg …
Asymmetric domain wall propagation caused by interfacial Dzyaloshinskii-Moriya interaction in exchange biased Au/Co/NiO layered system
Dzyaloshinskii-Moriya interaction (DMI) is a well-known phenomenon in
ferromagnetic/heavy metal or ferromagnetic/nonmagnetic oxide thin layered films. Here, we …
ferromagnetic/heavy metal or ferromagnetic/nonmagnetic oxide thin layered films. Here, we …
Controlling the interlayer Dzyaloshinskii–Moriya interaction by electrical currents
The recently discovered interlayer Dzyaloshinskii–Moriya interaction (IL-DMI) in multilayers
with perpendicular magnetic anisotropy favors canting of spins in the in-plane direction. It …
with perpendicular magnetic anisotropy favors canting of spins in the in-plane direction. It …
Experimental observation of the correlation between the interfacial Dzyaloshinskii–Moriya interaction and work function in metallic magnetic trilayers
YK Park, DY Kim, JS Kim, YS Nam, MH Park… - NPG Asia …, 2018 - nature.com
Abstract The Dzyaloshinskii–Moriya interaction (DMI) generates intriguing chiral magnetic
objects, such as magnetic skyrmions and chiral domain walls, that can be used as building …
objects, such as magnetic skyrmions and chiral domain walls, that can be used as building …
Current-induced modulation of the interfacial Dzyaloshinskii-Moriya interaction
N Kato, M Kawaguchi, YC Lau, T Kikuchi, Y Nakatani… - Physical review …, 2019 - APS
The Dzyaloshinskii-Moriya (DM) interaction is an antisymmetric exchange interaction that is
responsible for the emergence of chiral magnetism. The origin of the DM interaction …
responsible for the emergence of chiral magnetism. The origin of the DM interaction …
Enhancement of the spin-wave nonreciprocity in antiferromagnetically coupled multilayers with dipolar and interfacial Dzyaloshinskii-Moriya interactions
AF Franco, P Landeros - Physical Review B, 2020 - APS
Spin-wave-based circuits and logic devices have been considered as an alternative to
current electronic devices as they approach the physical limit of miniaturization …
current electronic devices as they approach the physical limit of miniaturization …
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