A novel AlGaN/GaN based enhancement-mode high electron mobility transistor with sub-critical barrier thickness
R Brown - 2015 - theses.gla.ac.uk
Power-switching devices require low on-state conduction losses, high-switching speed, high
thermal stability, and high input impedance. Using gallium nitride (GaN) based field-effect …
thermal stability, and high input impedance. Using gallium nitride (GaN) based field-effect …
A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT
R Brown, D Macfarlane, A Al-Khalidi… - IEEE Electron …, 2014 - ieeexplore.ieee.org
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-
semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm …
semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm …
Normally‐off AlGaN/GaN MOS‐HEMT using ultra‐thin Al0.45Ga0.55N barrier layer
In this work, we report on the fabrication of a normally‐off AlGaN/GaN Metal–Oxide–
Semiconductor High Electron Mobility Transistor (MOS‐HEMT) using an ultra‐thin Al0 …
Semiconductor High Electron Mobility Transistor (MOS‐HEMT) using an ultra‐thin Al0 …
Enhancement-Mode AlGaN/GaN MIS-HEMTs With High VTH and High IDmax Using Recessed-Structure With Regrown AlGaN Barrier
JT Asubar, S Kawabata, H Tokuda… - IEEE Electron …, 2020 - ieeexplore.ieee.org
We report on an Al 2 O 3/AlGaN/GaN metalinsulator-semiconductor high-electron-mobility
transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After …
transistor (MIS-HEMT) with recessed-gate structure and regrown AlGaN barrier. After …
Normally-off operation AlGaN/GaN MOS-HEMT with high threshold voltage
Normally-off operation AlGaN/GaN high electron mobility transistors have been developed
utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor …
utilising a fluorine-based treatment technique combined with a metal-oxide-semiconductor …
High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
W Saito, Y Takada, M Kuraguchi… - … on electron devices, 2003 - ieeexplore.ieee.org
AlGaN-GaN power high-electron mobility transistors (HEMTs) with 600-V breakdown voltage
are fabricated and demonstrated as switching power devices for motor drive and power …
are fabricated and demonstrated as switching power devices for motor drive and power …
Normally-off AlGaN/GaN high electron mobility transistors on Si substrate with selective barrier regrowth in ohmic regions
W Jiang, H Tang, JA Bardwell - Semiconductor Science and …, 2021 - iopscience.iop.org
In this paper, we report the fabrication of a normally-off AlGaN/GaN high electron mobility
transistor (HEMT) using an ultra-thin AlGaN barrier layer structure on Si (111) substrate …
transistor (HEMT) using an ultra-thin AlGaN barrier layer structure on Si (111) substrate …
Unpassivated GaN/AlGaN/GaN power high electron mobility transistors with dispersion controlled by epitaxial layer design
In this paper, a novel GaN/AlGaN/GaN high electron mobility transistor (HEMT) is discussed.
The device uses a thick GaN-cap layer (∼ 250 nm) to reduce the effect of surface potential …
The device uses a thick GaN-cap layer (∼ 250 nm) to reduce the effect of surface potential …
6.5 V high threshold voltage AlGaN/GaN power metal-insulator-semiconductor high electron mobility transistor using multilayer fluorinated gate stack
YH Wang, YC Liang, GS Samudra… - IEEE Electron …, 2015 - ieeexplore.ieee.org
In this letter, the approach of partial AlGaN recess and multiple layers of fluorinated Al 2 O 3
gate dielectric is utilized to achieve highest reported positive gate threshold voltage () …
gate dielectric is utilized to achieve highest reported positive gate threshold voltage () …
A comprehensive review of AlGaN/GaNHigh electron mobility transistors: Architectures and field plate techniques for high power/high frequency applications
JSR Kumar, HV Du John, IV BinolaKJebalin… - Microelectronics …, 2023 - Elsevier
Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …
techniques to improve the device's reliability and optimum performance. This literature …