Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
Annealing behaviors of vacancy‐type defects in ion‐implanted GaN are studied by positron
annihilation. Mg+ and N+ ions are implanted to obtain 700 nm deep box profiles with Mg …
annihilation. Mg+ and N+ ions are implanted to obtain 700 nm deep box profiles with Mg …
Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride–A Route to 3D Nanoporous Patterning
M Hoormann, F Lüßmann, C Margenfeld… - … status solidi (b), 2024 - Wiley Online Library
Dopant‐selective electrochemical etching (ECE) of gallium nitride (GaN) results in well‐
defined porous layers with tunable refractive index, which is extremely interesting for …
defined porous layers with tunable refractive index, which is extremely interesting for …
On the Single-Event Burnout Performance of a GaN HEMT With Sunken Source-Connected Field Plate Architecture
The field plate technology has been regarded as the best practical solution for alleviating
several reliability issues observed with high power GaN HEMTs for mm-Wave applications …
several reliability issues observed with high power GaN HEMTs for mm-Wave applications …
Selective Area Growth, Etching, and Doping of GaN By MOCVD for Power Electronics
GaN electronics have been gaining traction in the low-voltage market (< 650 V) using
mature hetero field-effect transistors (HFETs). For high-voltage and high-power application …
mature hetero field-effect transistors (HFETs). For high-voltage and high-power application …