The lateral photovoltaic effect (LPE) can be used in position-sensitive detectors to detect
very small displacements due to its output of lateral photovoltage changing linearly with light …

A greatly enhanced lateral photovoltaic effect (LPE) is achieved in an improved metal-
semiconductor (MS) structure of TiO 2 (1.2 nm)/Ti (6.2 nm)/Si⁠. Compared with the LPE in …

The lateral photovoltaic effect (LPE) has garnered significant attention due to its extensive
applications in fields such as position-sensitive detectors, artificial intelligence, imaging …

Superlubricity provides a novel approach to addressing friction and wear issues in
mechanical systems. However, little is known regarding improving the atomic force …

Though separate studies on the individual properties of photovoltage and
magnetoresistance (MR) have made much progress, work integrating the two phenomena …

This work reported on detecting properties of ap+-in+ position-sensitive detector (PSD)
which has a thin heavily-doped p+-GaAs layer and a thick lightly-doped i-GaAs layer as a …

We demonstrate that the lateral photovoltaic effect in the Fe/SiO 2/p-Si structure not only
strongly depends on the optical radiation wavelength and temperature, but is also sensitive …

A 32/128 linear array of 1-D amorphous silicon position sensitive detectors (PSD) was
integrated into a self constructed suitable and portable data acquisition prototype system …

The position of a 40μm wide by 400μm long cantilever in a microscope was detected by a 32
lines array of 1D amorphous silicon position sensitive detectors (PSD). The sensor was …

A GaAs-based pin structure which is layer-compatible to a commercial heterojunction
bipolar transistor (HBT) was employed to fabricate a visible-light position-sensitive detector …