Within the expanding domain of electrical power demand, the future of power module
packaging is entwined with the progress of (ultra) wide bandgap (UWBG) materials. These …

This study presents an early exploration into the application of a self‐powered photodetector
based on titanium zinc nitride (TiZnN) films in power electronics, aiming to overcome …

Integrated circuits are created by interfacing different materials, semiconductors, and metals,
which are appropriately deposited or grown on substrates and layers soldered together …

This paper proposes a comprehensive power system designed for the use of a more electric
aircraft power distribution system. Instead of traditional Nicad battery solutions as the energy …

The increasing popularity of electric drives employing an isolated dual-inverter (DI) topology
is motivated by their superior DC-link voltage and power utilization, fault-tolerant operation …

Silicon carbide, a third-generation semiconductor material, is widely used in the creation of
high-power devices. In this article, we systematically study the influence of three crucial …

This paper addresses the challenge of thermal management in high-power semiconductor
devices, where increasing power densities and complex operating environments demand …

This chapter mainly enlighten about the development and trends of the field effect transistors
(FETs) in the nanoelectronics industries. According to Moore's law, the number of transistors …

GaN-based wide bandgap transistors offer several advantages compared to silicon-based
counterparts. These transistors are effective in reducing power conversion losses and find …

Over the last several years, a significant advancement in high-voltage electronic packaging
techniques has paved the way for next-generation power electronics. However, the difficulty …