Spintronic devices for high-density memory and neuromorphic computing–A review
Spintronics is a growing research field that focuses on exploring materials and devices that
take advantage of the electron's “spin” to go beyond charge based devices. The most …
take advantage of the electron's “spin” to go beyond charge based devices. The most …
Spintronic heterostructures for artificial intelligence: A materials perspective
With the advent of the Big Data era, neuromorphic computing (NC)(also known as brain‐
inspired computing) has gained a lot of research interest. Spintronic devices are the …
inspired computing) has gained a lot of research interest. Spintronic devices are the …
Field-free switching and high spin–orbit torque efficiency in Co/Ir/CoFeB synthetic antiferromagnets deposited on miscut Al2O3 substrates
Ir-CoFeB-based synthetic antiferromagnets (SAFs) are potential candidates as the free layer
of the next-generation magnetic tunnel junctions (MTJs) for high speed and density …
of the next-generation magnetic tunnel junctions (MTJs) for high speed and density …
Symmetry breaking for current-induced magnetization switching
Electromagnetic phenomena, such as magnetization switching, are guided by parity and
time-reversal symmetries. Magnetic field and magnetization are time-odd axial vectors …
time-reversal symmetries. Magnetic field and magnetization are time-odd axial vectors …
Field-free magnetization switching in A1 CoPt single-layer nanostructures for neuromorphic computing
L Yang, C Zuo, Y Tao, W Li, F Jin, Y Hui… - ACS Applied Nano …, 2023 - ACS Publications
Current-induced field-free magnetization switching in single-layer films has been widely
investigated for the application of spin–orbit torque (SOT) drivers in low-power, high-density …
investigated for the application of spin–orbit torque (SOT) drivers in low-power, high-density …
Field-Free Spin–Orbit Torque-Induced Magnetization Switching in the IrMn/CoTb Bilayers with a Spontaneous In-Plane Exchange Bias
R Liu, J Chen, Z Li, X Lu, Y Lu, T Liu… - … Applied Materials & …, 2023 - ACS Publications
Spin–orbit torque (SOT)-induced magnetization switching in ferrimagnetic materials is
promising for application in a new generation of information storage devices. Here, we …
promising for application in a new generation of information storage devices. Here, we …
Spin–Orbit Torque-Driven Memristor in L10 FePt Systems with Nanoscale-Thick Layers for Neuromorphic Computing
Y Tao, C Sun, W Li, C Wang, F Jin… - ACS Applied Nano …, 2023 - ACS Publications
In this study, a memristor driven by spin–orbit torque (SOT) is realized in the nanoscale
thickness L10 FePt systems with high perpendicular magnetization anisotropy (PMA). Due to …
thickness L10 FePt systems with high perpendicular magnetization anisotropy (PMA). Due to …
Field‐Free Memristive Spin–Orbit Torque Switching in A1 CoPt Single Layer for Image Edge Detection
L Yang, W Li, C Zuo, Y Tao, F Jin, H Li… - Advanced Electronic …, 2024 - Wiley Online Library
While spin–orbit torque (SOT) devices are extensively investigated due to their potential for
use in neural network computation, it remains challenging to explore the hardware for neural …
use in neural network computation, it remains challenging to explore the hardware for neural …
Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer
M Jiang, H Asahara, S Ohya, M Tanaka - Advanced Science, 2023 - Wiley Online Library
To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching
and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT …
and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT …
Field-Free Spin–Orbit Torque Magnetization Switching in a Single-Phase Ferromagnetic and Spin Hall Oxide
Y Jo, Y Kim, S Kim, E Ryoo, G Noh, GJ Han, JH Lee… - Nano Letters, 2024 - ACS Publications
Current-induced spin–orbit torque (SOT) offers substantial promise for the development of
low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently …
low-power, nonvolatile magnetic memory. Recently, a single-phase material concurrently …