The invention relates to a method of providing a structure by depositing a layer on a
substrate in a reactor. The method comprising: introducing a silicon halide precursor in the …

The method relates to a method of forming an enhanced unexposed photoresist layer from
an unexposed photoresist layer on a substrate by increasing the sensitivity of the unexposed …

Provided is a substrate processing method capable of preventing over-etching of a part of a
stair-case structure due to an etching solution, when a barrier layer is selectively formed on …

A method for forming a semiconductor device structure is disclosure. The method may
include, depositing an NMOS gate dielectric and a PMOS gate dielectric over a semicon …

2020-11-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

D142, 841 S 2,410,420 A 2,563,931 A 2,660,061 A 2,745,640 A 2,990,045 A 3,038,951 A
3,089,507 A 3,094,396 A 3,232,437 A 3,263,502 A 3,332,286 A 3,410,349 A 3,588,192 A …

A method for depositing a metal chalcogenide on a substrate by cyclical deposition is
disclosed. The method may include, contacting the substrate with at least one metal …

Methods for forming a transition metal nitride film on a substrate by atomic layer deposition
and related semiconductor device structures are provided. In some embodiments, methods …

A method of forming vertical spacers for spacer-defined multiple patterning, includes:
depositing a first conformal pattern-transfer film having a first film stress, and continuously …

A method for selectively depositing a metallic film on a substrate comprising a first dielectric
surface and a second metallic surface is disclosed. The method may include, exposing the …