We report on the dynamic properties of 1.31 μm InAs/GaAs and 1.55 μm InAs/InP quantum-
dot Fabry-Perot lasers with the main focus on the increase of their large-signal modulation …

Passive mode-locking of two-section quantum-dot mode-locked lasers grown by
metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide …

We demonstrate an ultrashort pulse and high power single-section mode-locked laser using
chirped multiple InAs/InP quantum dot (QD) layers as the active region of the laser. The …

High-performance buried heterostructure (BH) C-band InAs/InP quantum dot (QD) and L-
band InGaAsP/InP quantum well (QW) two-section passively mode-locked lasers (MLLs) are …

André Röhm investigates the dynamic properties of two-state lasing quantum dot lasers, with
a focus on ground state quenching. With a novel semi-analytical approach, different …

We use a semiconductor optical Bloch equation approach combined with a traveling wave
equation for the electric field to explore the effect of noise on the signal quality of a quantum …

Most recent achievements in passive mode-locking of quantum-dot lasers, with the main
focus on jitter reduction and frequency tuning, are described. Different techniques, leading to …

This work reports on non-degenerate four-wave mixing under dual-mode injection in
metalorganic vapor phase epitaxy grown InP/InAs quantum-dash and quantum dot Fabry …

In this chapter optical and electrical properties of quantum-dot mode-locked semiconductor
lasers as well as applications based on these devices are discussed. Section 4.1 gives a …

Ground state gain dynamics of In (Ga) As-quantum dot excited state lasers are investigated
via single-color ultrafast pump-probe spectroscopy below and above lasing threshold. Two …