High rectification ratio in polymer diode rectifier through interface engineering with self-assembled monolayer

K Ferchichi, S Pecqueur, D Guerin, R Bourguiga… - Electronic …, 2021 - mdpi.com
In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in
rigid and flexible substrate with a rectification ratio up to 106. This performance has been …

Improving the charge injection in organic transistors by covalently linked graphene oxide/metal electrodes

X Chen, S Zhang, K Wu, Z Xu, H Li… - Advanced Electronic …, 2016 - Wiley Online Library
Electrodes, one of the key components of organic field‐effect transistors (OFETs), exert great
influence on the device performance as well as circuit fabrication. Conventional metal …

High performance low-voltage organic field-effect transistors enabled by solution processed alumina and polymer bilayer dielectrics

X Ye, H Lin, X Yu, S Han, M Shang, L Zhang, Q Jiang… - Synthetic Metals, 2015 - Elsevier
High performance low-voltage pentacene-based organic field-effect transistors (OFETs) are
fabricated utilizing solution-processed alumina (Al 2 O 3) as high-k gate dielectric, and the …

High-performance organic thin-film transistor by using LaNbO as gate dielectric

CY Han, JQ Song, WM Tang, CH Leung… - Applied Physics …, 2015 - pubs.aip.org
Pentacene organic thin-film transistors (OTFTs) using La x Nb (1− x) O y as gate dielectric
with different La contents (x= 0.347, 0.648) have been fabricated and compared with those …

Use of bilayer gate insulator to increase the electrical performance of pentacene based transistor

S Ruzgar, M Caglar - Synthetic Metals, 2017 - Elsevier
In this study, bottom-gate top-contact pentacene-based organic field effect transistors (OFET)
with various spin-coated ultrathin organic dielectrics on anodized aluminum oxide (Al 2 O 3) …

Low-temperature solution-processed high-capacitance AlOx dielectrics for low-voltage carbon-based transistors

A Kumar, A Perinot, SK Sarkar, D Gupta, NF Zorn… - Organic …, 2022 - Elsevier
Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-
based methods and their application in developing low-voltage carbon-based transistors …

High-mobility pentacene thin-film transistor by using LaxTa (1− x) Oy as gate dielectric

CY Han, WM Tang, CH Leung, CM Che, PT Lai - Organic Electronics, 2014 - Elsevier
Pentacene organic thin-film transistors (OTFTs) using La x Ta (1− x) O y as gate dielectric
with different La contents (x= 0.227, 0.562, 0.764, 0.883) have been fabricated and …

NdxHf(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors

YX Ma, QH Wang, H Chen, PT Lai… - physica status solidi …, 2023 - Wiley Online Library
NdON, HfON, and their mixtures (NdxHf (1− x) ON) with different Hf contents are adopted as
the gate dielectrics of pentacene organic thin‐film transistors (OTFTs). Their capacitance …

Effect of SiO2 Films with Different Thickness Deposited on Copper Electrode Surface for Insulation Properties of Propylene Carbonate

Z Zhang, Q Yang, S Wu - IEEE Transactions on Dielectrics and …, 2021 - ieeexplore.ieee.org
In this work, 100, 200, and 400 nm SiO 2 films are deposited on the electrode surface by
magnetron sputtering, and the effect of film thickness on the insulation performance of …

Comparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistors

N Padma, SN Sawant, V Sudarsan, S Sen… - … status solidi (a), 2013 - Wiley Online Library
Electrical measurements on copper phthalocyanine (CuPc)‐based organic field effect
transistors using SiO2 dielectric revealed hysteresis and threshold voltage instability to be …