High rectification ratio in polymer diode rectifier through interface engineering with self-assembled monolayer
K Ferchichi, S Pecqueur, D Guerin, R Bourguiga… - Electronic …, 2021 - mdpi.com
In this work, we demonstrate P3HT (poly 3-hexylthiophene) organic rectifier diode both in
rigid and flexible substrate with a rectification ratio up to 106. This performance has been …
rigid and flexible substrate with a rectification ratio up to 106. This performance has been …
Improving the charge injection in organic transistors by covalently linked graphene oxide/metal electrodes
X Chen, S Zhang, K Wu, Z Xu, H Li… - Advanced Electronic …, 2016 - Wiley Online Library
Electrodes, one of the key components of organic field‐effect transistors (OFETs), exert great
influence on the device performance as well as circuit fabrication. Conventional metal …
influence on the device performance as well as circuit fabrication. Conventional metal …
High performance low-voltage organic field-effect transistors enabled by solution processed alumina and polymer bilayer dielectrics
High performance low-voltage pentacene-based organic field-effect transistors (OFETs) are
fabricated utilizing solution-processed alumina (Al 2 O 3) as high-k gate dielectric, and the …
fabricated utilizing solution-processed alumina (Al 2 O 3) as high-k gate dielectric, and the …
High-performance organic thin-film transistor by using LaNbO as gate dielectric
CY Han, JQ Song, WM Tang, CH Leung… - Applied Physics …, 2015 - pubs.aip.org
Pentacene organic thin-film transistors (OTFTs) using La x Nb (1− x) O y as gate dielectric
with different La contents (x= 0.347, 0.648) have been fabricated and compared with those …
with different La contents (x= 0.347, 0.648) have been fabricated and compared with those …
Use of bilayer gate insulator to increase the electrical performance of pentacene based transistor
In this study, bottom-gate top-contact pentacene-based organic field effect transistors (OFET)
with various spin-coated ultrathin organic dielectrics on anodized aluminum oxide (Al 2 O 3) …
with various spin-coated ultrathin organic dielectrics on anodized aluminum oxide (Al 2 O 3) …
Low-temperature solution-processed high-capacitance AlOx dielectrics for low-voltage carbon-based transistors
Low-temperature processing of high-capacitance metal oxide-based dielectrics by solution-
based methods and their application in developing low-voltage carbon-based transistors …
based methods and their application in developing low-voltage carbon-based transistors …
High-mobility pentacene thin-film transistor by using LaxTa (1− x) Oy as gate dielectric
CY Han, WM Tang, CH Leung, CM Che, PT Lai - Organic Electronics, 2014 - Elsevier
Pentacene organic thin-film transistors (OTFTs) using La x Ta (1− x) O y as gate dielectric
with different La contents (x= 0.227, 0.562, 0.764, 0.883) have been fabricated and …
with different La contents (x= 0.227, 0.562, 0.764, 0.883) have been fabricated and …
NdxHf(1−x)ON as Gate Dielectric for High‐Performance Pentacene Organic Thin‐Film Transistors
NdON, HfON, and their mixtures (NdxHf (1− x) ON) with different Hf contents are adopted as
the gate dielectrics of pentacene organic thin‐film transistors (OTFTs). Their capacitance …
the gate dielectrics of pentacene organic thin‐film transistors (OTFTs). Their capacitance …
Effect of SiO2 Films with Different Thickness Deposited on Copper Electrode Surface for Insulation Properties of Propylene Carbonate
Z Zhang, Q Yang, S Wu - IEEE Transactions on Dielectrics and …, 2021 - ieeexplore.ieee.org
In this work, 100, 200, and 400 nm SiO 2 films are deposited on the electrode surface by
magnetron sputtering, and the effect of film thickness on the insulation performance of …
magnetron sputtering, and the effect of film thickness on the insulation performance of …
Comparison of the role of holes and electrons in hysteresis and threshold voltage stability of organic field effect transistors
Electrical measurements on copper phthalocyanine (CuPc)‐based organic field effect
transistors using SiO2 dielectric revealed hysteresis and threshold voltage instability to be …
transistors using SiO2 dielectric revealed hysteresis and threshold voltage instability to be …