Ferroelectric materials, the charge equivalent of magnets, have been the subject of
continued research interest since their discovery more than 100 years ago. The …

Efforts to design devices emulating complex cognitive abilities and response processes of
biological systems have long been a coveted goal. Recent advancements in flexible …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

The interest in ferroelectric tunnel junctions (FTJ) has been revitalized by the discovery of
ferroelectricity in fluorite‐structured oxides such as HfO2 and ZrO2. In terms of thickness …

The rapid development of 5G, big data, and Internet of Things (IoT) technologies is urgently
required for novel non-volatile memory devices with low power consumption, fast read/write …

Low dimensional micro or nano materials, which have unique physical, chemical, and
electrical properties, have recently gained attention in the preparation of nonvolatile memory …

The groundbreaking discovery of unconventional ferroelectricity in HfO2 opens exciting
prospects for next‐generation memory devices. However, the practical implementation …

Ferroelectric tunnel junction (FTJ) is one promising candidate for next-generation
nonvolatile data storage and neural network computing systems. In this work, the high …

Herein, dual‐gate field‐effect transistors (DG FETs) fabricated on Si substrate and a
corresponding NOR‐type array designed for low‐power on‐chip trainable hardware neural …