A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and …
This Review highlights basic and transition metal conducting and semiconducting oxides.
We discuss their material and electronic properties with an emphasis on the crystal …
We discuss their material and electronic properties with an emphasis on the crystal …
[HTML][HTML] Piezoelectric materials for flexible and wearable electronics: A review
Self-powered devices and micro-sensors are in high demand for intelligent electronics and
flexible wearables for applications in medical healthcare and human–computer interactive …
flexible wearables for applications in medical healthcare and human–computer interactive …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
Review of Ga2O3-based optoelectronic devices
Abstract Gallium oxide (Ga 2 O 3), with an ultrawide-bandgap of~ 4.9 eV, has attracted
recently much scientific and technological attention due to its extensive future applications in …
recently much scientific and technological attention due to its extensive future applications in …
Demonstration of 4.7 kV breakdown voltage in NiO/β-Ga2O3 vertical rectifiers
Vertical heterojunction NiO/β n-Ga 2 O/n+ Ga 2 O 3 rectifiers employing NiO layer extension
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
beyond the rectifying contact for edge termination exhibit breakdown voltages (VB) up to 4.7 …
A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
In this Letter, high-performance vertical NiO/β-Ga 2 O 3 p–n heterojunction diodes without
any electric field managements were reported. The devices show a low leakage current …
any electric field managements were reported. The devices show a low leakage current …
Point defects in Ga2O3
MD McCluskey - Journal of Applied Physics, 2020 - pubs.aip.org
In the field of high-power electronics, gallium oxide (Ga2O3) is attracting attention due to its
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …
wide bandgap and ability to be doped n-type. Point defects, including vacancies, impurities …
β-Ga2O3 vertical heterojunction barrier Schottky diodes terminated with p-NiO field limiting rings
In this Letter, high-performance β-Ga 2 O 3 vertical heterojunction barrier Schottky (HJBS)
diodes have been demonstrated together with the investigation of reverse leakage …
diodes have been demonstrated together with the investigation of reverse leakage …
1-kV Sputtered p-NiO/n-Ga2O3 Heterojunction Diodes With an Ultra-Low Leakage Current Below A/cm2
X Lu, X Zhou, H Jiang, KW Ng, Z Chen… - IEEE Electron …, 2020 - ieeexplore.ieee.org
High performance NiO/β-Ga 2 O 3 heterojunction pn diodes were realized by applying a
sputtered p-type NiO film onto a lightly doped n-type β-Ga 2 O 3 epitaxial layer. Taking …
sputtered p-type NiO film onto a lightly doped n-type β-Ga 2 O 3 epitaxial layer. Taking …