In this paper, we report the device performance of a new graphene nanoribbon field-effect
transistor (GNRFET) with a linearly graded binary metal alloy gate through a quantum …

A new double gate graphene nanoribbon field effect transistor with dual material for gate
namely DMG-GNRFET is proposed. DMG-GNRFET includes a gate which is divided to the …

This paper investigates the performance of vacuum gate dielectric doping-free carbon
nanotube/nanoribbon field-effect transistors (VGD-DL CNT/GNRFETs) via computational …

The commonly used method to engineer the negative differential resistance (NDR) of
nanoribbon materials and devices is engineering nanoribbon structures, suffering from …

This article introduces a novel label-free deoxyribonucleic acid (DNA) nanosensor based on
a coaxially gated junctionless carbon nanotube field-effect transistor (JL CNTFET). The …

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the
electronic behavior shows fascinating properties, giving high expectation for the possible …

The prominent method used for altering the negative differential resistance (NDR) of
nanoribbon devices is changing nanoribbon structures, which complicates the design and …

An important issue in devices with negative differential resistance (NDR) in I–V
characteristics is the ability to control device characteristics. In this paper, a novel double …

Characteristics of an armchair graphene nanoribbon tunnel field effect transistor
(AGNRTFET) were modeled quantum mechanically. The transport equation in the AGNR …

In this paper, we show how the band-to-band tunneling (BTBT) regime of ultra-scaled
carbon nanotube fieldeffect transistor (CNTFET) can be exploited to get ultra-high …