Numerical study of a new junctionless tunneling field-effect transistor based on graphene nanoribbon
K Tamersit, F Djeffal - … Conference on Design & Test of …, 2019 - ieeexplore.ieee.org
In this paper, a new nanoscale junctionless graphene nanoribbon tunnel field-effect
transistor (JL GNRTFET) is proposed and assessed through a quantum simulation study …
transistor (JL GNRTFET) is proposed and assessed through a quantum simulation study …
Asymmetric bilayer graphene nanoribbon MOSFETs for analog and digital electronics
A Dinarvand, V Ahmadi, G Darvish - Superlattices and Microstructures, 2016 - Elsevier
In this paper, a new structure was proposed for bilayer graphene nanoribbon field-effect
transistor (BGNFET) mainly to enhance the electrical characteristics in analog and digital …
transistor (BGNFET) mainly to enhance the electrical characteristics in analog and digital …
Gate Dielectric Constant Engineering for Alleviating Ambipolar Conduction in MOS-GNRFET
MT Mahmoud, MS Salem… - ECS Journal of Solid State …, 2021 - iopscience.iop.org
In the current study, a gate dielectric constant engineering approach is reported to minimize
the ambipolar conduction in MOSFET-Like Graphene Nano Ribbon (MOS-GNRFET). The …
the ambipolar conduction in MOSFET-Like Graphene Nano Ribbon (MOS-GNRFET). The …
Improving the Current Ratio and Ambipolar Behavior of Junctionless CNTFETs Using Graded Metal Gate Work Function: A Quantum Simulation
K Tamersit, H Bourouba… - 2022 19th International …, 2022 - ieeexplore.ieee.org
In this paper, a new improvement technique based on an upward gate work function is
computationally suggested to boost the current ratio of junctionless carbon nanotube field …
computationally suggested to boost the current ratio of junctionless carbon nanotube field …
Double-Gate Junctionless GNRFETs Operating in the BTBT Regime: A Simple Design with Improved Performance for Low-Power Applications
K Tamersit - 2021 International Semiconductor Conference …, 2021 - ieeexplore.ieee.org
In this paper, the pocket-induced barrier technique is employed to improve the performance
of band-to-band tunneling (BTBT) double gate (DG) junctionless (JL) graphene nanoribbon …
of band-to-band tunneling (BTBT) double gate (DG) junctionless (JL) graphene nanoribbon …
[HTML][HTML] Computational study of bandgap-engineered Graphene nano ribbon tunneling field-effect transistor (BE-GNR-TFET)
S Abbaszadeh, SS Ghoreishi, R Yousefi… - International Journal of …, 2020 - journals.iau.ir
By applying tensile local uniaxial strain on 5 nm of drain region and compressive local
uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon …
uniaxial strain on 2.5 nm of source and 2.5 nm of channel regions of graphene nanoribbon …
Investigation of hetero-material-gate in CNTFETs for ultra low power circuits
W Wang, M Xu, J Liu, N Li, T Zhang… - JSTS: Journal of …, 2015 - koreascience.kr
An extensive investigation of the influence of gate engineering on the CNTFET switching,
high frequency and circuit level performance has been carried out. At device level, the …
high frequency and circuit level performance has been carried out. At device level, the …