As an emerging concept for the development of new materials with nanoscale features,
nanoarchitectonics has received significant recent attention. Among the various approaches …

Among the emerging memories, resistive switching (RS) based resistive random-access
memories (RRAMs) are attracting lots of attention due to their simple metal–insulator–metal …

Ferroelectric materials have drawn widespread attention due to their switchable
spontaneous polarization and anomalous photovoltaic effect. The coupling between …

Photo-induced novel effect in a material with multiple physical properties has highly
important potential applications in the photo-electric multifunctional electronic devices. In …

Resistive random‐access memory (RRAM) is a promising candidate for next‐generation
nonvolatile random‐access memory protocols. The information storage in RRAM is realized …

In this work, BiFeO 3 (BFO) nanoparticles of rhombohedral distorted perovskite structure with
a particle about 50–100 nm are prepared by a facile sol-gel method. The as-prepared BFO …

Ag-NPs doped NiFe2O4 (NFO) thin films have been synthesized by the chemical solution
deposition method. The effect of Ag-NPs incorporation on the resistive switching (RS) …

Abstract Bilayer of NiO x/TiO 2 thin film spin-coated and sputtering-deposited on the fluorine
doped tin oxide (FTO) substrate is employed to develop a resistive random access memory …

Abstract Bi 0.97-x Sr 0.03 Gd x Fe 0.94 Mn 0.04 Co 0.02 O 3 (BSG x FMC) thin films were
fabricated by sol-gel method. It is found that the formation of oxygen vacancies of BSG x …

The weak and deficient manipulation of charge–spin coupling in multiferroic BiFeO3 (BFO)
notoriously limits device applications. To mould the spontaneous charge and the spin …