Nonvolatile magnetoelectric switching of magnetic tunnel junctions with dipole interaction
The magnetoelectric effect is technologically appealing because of its ability to manipulate
magnetism using an electric field rather than magnetic field or current, thus providing a …
magnetism using an electric field rather than magnetic field or current, thus providing a …
Multiferroic Properties and Magnetic Anisotropy in P(VDF-TrFE) Composites with Oriented CoFe2O4 Nanofibers
Y Feng, Y Zhang, J Sheng, T Zhang, Q Chi… - The Journal of …, 2021 - ACS Publications
Multiferroic materials have good application prospect in the field of non-volatile random
access memory due to the simultaneous existence of ferroelectricity, ferromagnetism, and …
access memory due to the simultaneous existence of ferroelectricity, ferromagnetism, and …
In-memory logic operations and neuromorphic computing in non-volatile random access memory
Recent progress in the development of artificial intelligence technologies, aided by deep
learning algorithms, has led to an unprecedented revolution in neuromorphic circuits …
learning algorithms, has led to an unprecedented revolution in neuromorphic circuits …
Strain-mediated voltage-controlled switching of magnetic skyrmions in nanostructures
Magnetic skyrmions are swirling spin structures stabilized typically by the Dyzaloshinskii-
Moriya interaction. The existing control of magnetic skyrmions has often relied on the use of …
Moriya interaction. The existing control of magnetic skyrmions has often relied on the use of …
Rhombohedral BiFeO3 thick films integrated on Si with a giant electric polarization and prominent piezoelectricity
Strikingly challenging the widely accepted opinion that a giant spontaneous polarization
(Ps) of~ 150 μC/cm2 in pure BiFeO3 can only be achieved in strain-induced tetragonal …
(Ps) of~ 150 μC/cm2 in pure BiFeO3 can only be achieved in strain-induced tetragonal …
[HTML][HTML] Structure evolution of the interfacial layer of BaTiO3 thin films during annealing process and related good resistive switching behaviors
BaTiO 3 thin films with different annealing times were grown on LSMO/STO (001) substrates
by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the …
by pulsed laser deposition. An interesting phenomenon of loss-and-reappearance of the …
Full voltage manipulation of the resistance of a magnetic tunnel junction
One of the motivations for multiferroics research is to find an energy-efficient solution to
spintronic applications, such as the solely electrical control of magnetic tunnel junctions …
spintronic applications, such as the solely electrical control of magnetic tunnel junctions …
Fast 180 magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage
Voltage-driven 180° magnetization switching provides a low-power alternative to current-
driven magnetization switching widely used in spintronic devices. Here we computationally …
driven magnetization switching widely used in spintronic devices. Here we computationally …
Perspective: Magnetoelectric switching in thin film multiferroic heterostructures
Since the resurgence of multiferroics research, significant advancement has been made in
the theoretical and experimental investigation of the electric field control of magnetization …
the theoretical and experimental investigation of the electric field control of magnetization …
Emerging 2D Cobalt Telluride (CoxTey): from Theory to Applications
Cobalt telluride, with tunable magnetism and ferromagnetism that hinged upon the
stoichiometric ratio, has emerged as a new member of 2D materials in the last decade …
stoichiometric ratio, has emerged as a new member of 2D materials in the last decade …