InAs quantum dots grown on metamorphic buffers as non-classical light sources at telecom C-band: A review
Long-distance quantum communication and computation is based on the exchange of
information via photons as flying qubits. In all foreseen implementations, from quantum …
information via photons as flying qubits. In all foreseen implementations, from quantum …
Telecom-band quantum dot technologies for long-distance quantum networks
A future quantum internet is expected to generate, distribute, store and process quantum bits
(qubits) over the world by linking different quantum nodes via quantum states of light. To …
(qubits) over the world by linking different quantum nodes via quantum states of light. To …
Structural and optical properties of InAs/(In) GaAs/GaAs quantum dots with single-photon emission in the telecom C-band up to 77 K
C Carmesin, F Olbrich, T Mehrtens, M Florian… - Physical Review B, 2018 - APS
We present a combined experimental and theoretical study of InAs/InGaAs/GaAs quantum
dots capable of single photon emission in the technologically important telecom C-band for …
dots capable of single photon emission in the technologically important telecom C-band for …
[HTML][HTML] Metamorphic InAs/InGaAs quantum dots for optoelectronic devices: A review
L Seravalli - Microelectronic Engineering, 2023 - Elsevier
InAs quantum dots grown on relaxed, metamorphic InGaAs buffers are an important
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
heterostructure for the realization of devices based on GaAs substrates. In these last 20 …
Reviewing quantum dots for single-photon emission at 1.55 μm: a quantitative comparison of materials
L Seravalli, F Sacconi - Journal of Physics: Materials, 2020 - iopscience.iop.org
In this work, we present a review of quantum dot (QD) material systems that allow us to
obtain light emission in the telecom C-band at 1.55 µm. These epitaxial semiconductor …
obtain light emission in the telecom C-band at 1.55 µm. These epitaxial semiconductor …
On-demand CMOS-compatible fabrication of ultrathin self-aligned SiC nanowire arrays
The field of semiconductor nanowires (NWs) has become one of the most active and mature
research areas. However, progress in this field has been limited, due to the difficulty in …
research areas. However, progress in this field has been limited, due to the difficulty in …
Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the
development of deterministic sources of high-quality quantum states of light. Such non …
development of deterministic sources of high-quality quantum states of light. Such non …
Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes
L Leguay, A Chellu, J Hilska… - … and Simulation of …, 2024 - spiedigitallibrary.org
This research focuses on strain-free GaSb/AlGaSb quantum dots (QDs) grown via local
droplet etching (LDE) for their potential in quantum photonic applications. These QDs exhibit …
droplet etching (LDE) for their potential in quantum photonic applications. These QDs exhibit …
Effects of In, Sb and N Alloyed Capping on the Electronic Band Structures of Vertically Coupled InAs SK-SML Quantum Dot System
R Gourishetty, S Chakrabarti - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
The effects of strain, quantum confinement, and composition on the optical and electronic
properties of vertically-coupled InAs/GaAs quantum dots (QDs) capped with a thin layer …
properties of vertically-coupled InAs/GaAs quantum dots (QDs) capped with a thin layer …
From Dot to Ring: Tunable Exciton Topology in Type-II InAs/GaAsSb Quantum Dots
We present an experimental and theoretical study about the carrier confinement geometry
and topology in InAs/GaAsSb quantum dots. The investigated sample consists of a field …
and topology in InAs/GaAsSb quantum dots. The investigated sample consists of a field …