Covering state-of-the-art advances, novel applications, and future perspectives, this volume
presents new directions on the basic studies of charged particle and photon interactions with …

Historically, in the mass production of semiconductor devices, exposure tools have been
repeatedly replaced with those with a shorter wavelength to meet the resolution …

Secondary electrons play critical roles in several imaging technologies, including extreme
ultraviolet (EUV) lithography. At longer wavelengths of light (eg 193 and 248 nm), the …

The development of extreme ultraviolet (EUV) lithography has progressed owing to
worldwide effort. As the development status of EUV lithography approaches the …

The major resist properties, namely, resolution, line edge roughness (LER), and sensitivity
have trade-off relationships. The relationships among them are determined by the pattern …

We developed a multiscale model that integrates density functional theory (DFT), molecular
dynamics (MD), and the finite difference method (FDM) to reflect the heterogeneous spatial …

The imaging reactions of resist materials used for nano-patterning have become radiation-
chemical reactions, with the shortening of wavelengths of the exposure light sources in …

Deprotonation of the adenine (A) base in both mononucleotide and oligonucleotide (ODN)
was measured by nanosecond pulse radiolysis. The cation radical (A+•) of deoxyadenosine …

The trade-off relationship between sensitivity, resolution, and roughness is a serious
problem in the development of extreme ultraviolet (EUV) resist materials. Increasing the acid …

The demand for improved performance of chemically amplified resists (CARs) is continually
increasing with the development of extreme ultraviolet lithography. Acid-generation …