Three-step growth of AlN films on sapphire substrates by metal nitride vapor phase epitaxy
X Lin, H Zhang, C Li, X Xie, L Bian, G Chen - Journal of Crystal Growth, 2024 - Elsevier
Control of the growth process is important for growing high-quality AlN films. In this work, AlN
films were grown on c-plane sapphire substrates by metal nitride vapor phase epitaxy …
films were grown on c-plane sapphire substrates by metal nitride vapor phase epitaxy …
Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector
J Zhang, L Deng, S Xia, C Guo, K Liu… - Semiconductor …, 2024 - iopscience.iop.org
Solid-state UV photodetectors (PD) have received numerous attention because of the
advantages of small size, absence of external cooling, high selectivity, and the ability to …
advantages of small size, absence of external cooling, high selectivity, and the ability to …
Mechanical peeling characteristics of large-scale high-crystallinity hBN films
R Chen, Q Li, J Li, Q Zhang, W Fang, K Liu… - Applied Surface …, 2024 - Elsevier
Hexagonal boron nitride (hBN), a two-dimensional material with a bandgap of 5.9 eV, can
be given priority for the dielectric substrate and mechanical release layer. The sapphire was …
be given priority for the dielectric substrate and mechanical release layer. The sapphire was …
Wafer level quasi-van der Waals epitaxy of AlGaN/GaN heterojunctions on sp2-bonded BN controlled by AlN nucleation layer
M Jiang, L Zhang, X Zhou, C Li, X Zhang, D Zhao… - Applied Surface …, 2024 - Elsevier
Two dimensional materials, such as sp 2-bonded boron nitride (BN) and graphene, have
been proven to be excellent templates for the growth and fabrication of independent group III …
been proven to be excellent templates for the growth and fabrication of independent group III …
Flow Modulation Epitaxy of Thick Boron Nitride Epilayers and Wafer-Level Exfoliation
Y Duo, Q Yang, L Wang, Y Song, Z Huo… - Crystal Growth & …, 2024 - ACS Publications
Uniform and continuous wafer-level sp2-hybridized boron nitride (sp2-BN) is essential for
the development of other III-nitride semiconductors in alleviating lattice mismatch and …
the development of other III-nitride semiconductors in alleviating lattice mismatch and …
Orbital hybridization and defective states of vacancy defects in AlN
Intrinsic atomic defects pose a great effect in wide-bandgap semiconductors owing to the
high tendency of forming in-gap defective states. Utilizing density-functional theory, the …
high tendency of forming in-gap defective states. Utilizing density-functional theory, the …
Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN
L Wang, Y Duo, Y Song, Z Huo, J Yang, J Ran… - Applied Physics …, 2024 - pubs.aip.org
In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN
and demonstrate the mechanical exfoliation of wafer-scale single-crystal AlN freestanding …
and demonstrate the mechanical exfoliation of wafer-scale single-crystal AlN freestanding …