To verify the interface state properties of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-
film transistors (TFTs) with SiN x and SiO 2 gate dielectrics, the low-frequency noise (LFN) of …

Atomic layer deposition (ALD) is a technique based on the surface reaction of precursors;
thus, it strongly depends on the surface states of the substrate. We demonstrate significant …

The authors investigated the effect of Si O x passivation layers on the bias stability of bottom
gate amorphous (α-) In Ga Zn O 4 thin film transistors (TFTs) fabricated on glass substrates …

We investigate the effects of interfacial dielectric layers (IDLs) on the electrical properties of
top‐gate In‐Ga‐Zn‐oxide (IGZO) thin film transistors (TFTs) fabricated at low temperatures …

Accurate determination of the charge transport characteristics of amorphous metal-oxide
transistors requires the mitigation of the effects of contact resistance. The use of additional …

Many challenges exist in understanding transport properties in metal-oxide thin film
transistors (MO-TFTs). Microstructural disorder, dielectric/active layer interface trap states …

We measured the valence band offset of sputtered ZrSiO x (bandgap 5.9 eV) on InGaZnO 4
(IGZO) using X-ray photoelectron spectroscopy and the bandgaps of these materials using …

InGaZnO 4 (IGZO) is attracting interest for transparent thin film transistors because of its
excellent transport properties even in amorphous films deposited at low temperatures. The …

With the growing need for large area display technology and the push for a faster and
cheaper alternative to the current amorphous indium gallium zinc oxide (a-IGZO) as the …

Two methods of measuring the electronic transport properties of a material are transistor DC-
voltage and the Hall effect. Hall mobility measurements of normally off semiconductors can …