Selective area etching and doping of GaN for high-power applications
Selective area doping (SAD) of gallium nitride (GaN), especially p-type doping, is desirable
for high-power applications but yet challenging. The lack of this process greatly limits the …
for high-power applications but yet challenging. The lack of this process greatly limits the …
Selective Area Growth, Etching, and Doping of GaN By MOCVD for Power Electronics
GaN electronics have been gaining traction in the low-voltage market (< 650 V) using
mature hetero field-effect transistors (HFETs). For high-voltage and high-power application …
mature hetero field-effect transistors (HFETs). For high-voltage and high-power application …