Previous studies have shown that pure SnO 2 thin films have low electrical and optical
properties. These poor properties of the SnO 2 can be enhanced by adding the appropriate …

The growth rate of In 2 O 3 thin film prepared by atomic layer deposition (ALD) is usually low
when using conventional oxidants, such as water vapor and oxygen gas, due to the low …

In 2 O 3 films were deposited by atomic layer deposition (ALD) using a newly synthesized
heteroleptic In precursor, In (DMAMP) 2 (O i Pr), and O 3 at 150–300° C. Self-limiting growth …

For the first time, synthesis of two new amidinate-ligand comprising heteroleptic indium
complexes, namely [InCl (amd) 2](1) and [InMe (amd) 2](2), via salt-metathesis and their …

This article discusses influence of the annealing temperature on the structural, optical and
electrical properties of indium oxide thin films which are prepared on glass substrate heated …

Polycrystalline films of undoped and fluorine-doped SnO2 (FTO) are deposited on a glass
substrate by spray pyrolysis at 400° C. The effects of fluor concentration (8, 10 and 12%) on …

Abstract Pure and Ti 3+ doped In 2 O 3 nanostructures had been synthesized by facile
hydrothermal method. The structural, morphological and optical properties were …

In the present work we investigated the change of preferred crystalline orientation of indium
oxide thin films prepared by ultrasonic spray technique on glass, single crystalline Si (400) …

Abstract Indium oxide (In 2 O 3) nanostructured thin films are prepared by ultrasonic spray
technique on glass substrates at 350° C. Solution flow rate influence on the structural …

High-quality body-centered cubic In 2 O 3 films were grown on a-plane sapphire substrates
at a temperature range of 100–600° C by pulsed laser deposition. The structure, optical, and …