Opportunities and challenges for magnetoelectric devices

JM Hu, CW Nan - Apl Materials, 2019 - pubs.aip.org
Magnetoelectric effect enables controlling magnetism with an electric field or controlling
polarization remotely with a magnetic field, without involving any driving electric currents …

Single Domain Spin Manipulation by Electric Fields in Strain Coupled Artificial<? format?> Multiferroic Nanostructures

M Buzzi, RV Chopdekar, JL Hockel, A Bur, T Wu… - Physical review …, 2013 - APS
We demonstrate in situ 90° electric field-induced uniform magnetization rotation in single
domain submicron ferromagnetic islands grown on a ferroelectric single crystal using x-ray …

Electric-field control of skyrmions in multiferroic heterostructure via magnetoelectric coupling

Y Ba, S Zhuang, Y Zhang, Y Wang, Y Gao… - Nature …, 2021 - nature.com
Room-temperature skyrmions in magnetic multilayers are considered to be promising
candidates for the next-generation spintronic devices. Several approaches have been …

[PDF][PDF] Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices

M Liu, BM Howe, L Grazulis, K Mahalingam, T Nan… - Adv. Mater, 2013 - academia.edu
The central challenge in tunable magnetic microwave devices lies in finding an energy
efficient way to perform wide ferromagnetic resonance (FMR) tuning in a reversible and …

Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature

P Li, A Chen, D Li, Y Zhao, S Zhang, L Yang, Y Liu… - Advanced …, 2014 - infona.pl
Electric‐field‐controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is
considered as the milestone of ultralow power spintronic devices. Here, reversible …

Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling

A Chen, Y Wen, B Fang, Y Zhao, Q Zhang… - Nature …, 2019 - nature.com
Electrically switchable magnetization is considered a milestone in the development of
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …

Giant electrical modulation of magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) heterostructure

S Zhang, Y Zhao, X Xiao, Y Wu, S Rizwan, L Yang… - Scientific reports, 2014 - nature.com
We report a giant electric-field control of magnetization (M) as well as magnetic anisotropy in
a Co40Fe40B20 (CoFeB)/Pb (Mg1/3Nb2/3) 0.7 Ti0. 3O3 (PMN-PT) structure at room …

Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives

JM Hu, CG Duan, CW Nan, LQ Chen - NPJ Computational Materials, 2017 - nature.com
Magnetoelectric composites and heterostructures integrate magnetic and dielectric materials
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …

Antiferromagnetic piezospintronics

Z Liu, Z Feng, H Yan, X Wang, X Zhou… - Advanced Electronic …, 2019 - Wiley Online Library
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …

Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)

M Liu, J Hoffman, J Wang, J Zhang… - Scientific reports, 2013 - nature.com
A central goal of electronics based on correlated materials or 'Mottronics' is the ability to
switch between distinct collective states with a control voltage. Small changes in structure …