Opportunities and challenges for magnetoelectric devices
JM Hu, CW Nan - Apl Materials, 2019 - pubs.aip.org
Magnetoelectric effect enables controlling magnetism with an electric field or controlling
polarization remotely with a magnetic field, without involving any driving electric currents …
polarization remotely with a magnetic field, without involving any driving electric currents …
Single Domain Spin Manipulation by Electric Fields in Strain Coupled Artificial<? format?> Multiferroic Nanostructures
We demonstrate in situ 90° electric field-induced uniform magnetization rotation in single
domain submicron ferromagnetic islands grown on a ferroelectric single crystal using x-ray …
domain submicron ferromagnetic islands grown on a ferroelectric single crystal using x-ray …
Electric-field control of skyrmions in multiferroic heterostructure via magnetoelectric coupling
Y Ba, S Zhuang, Y Zhang, Y Wang, Y Gao… - Nature …, 2021 - nature.com
Room-temperature skyrmions in magnetic multilayers are considered to be promising
candidates for the next-generation spintronic devices. Several approaches have been …
candidates for the next-generation spintronic devices. Several approaches have been …
[PDF][PDF] Voltage-impulse-induced non-volatile ferroelastic switching of ferromagnetic resonance for reconfigurable magnetoelectric microwave devices
The central challenge in tunable magnetic microwave devices lies in finding an energy
efficient way to perform wide ferromagnetic resonance (FMR) tuning in a reversible and …
efficient way to perform wide ferromagnetic resonance (FMR) tuning in a reversible and …
Electric field manipulation of magnetization rotation and tunneling magnetoresistance of magnetic tunnel junctions at room temperature
P Li, A Chen, D Li, Y Zhao, S Zhang, L Yang, Y Liu… - Advanced …, 2014 - infona.pl
Electric‐field‐controlled tunneling magnetoresistance (TMR) of magnetic tunnel junctions is
considered as the milestone of ultralow power spintronic devices. Here, reversible …
considered as the milestone of ultralow power spintronic devices. Here, reversible …
Giant nonvolatile manipulation of magnetoresistance in magnetic tunnel junctions by electric fields via magnetoelectric coupling
Electrically switchable magnetization is considered a milestone in the development of
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …
ultralow power spintronic devices, and it has been a long sought-after goal for electric-field …
Giant electrical modulation of magnetization in Co40Fe40B20/Pb(Mg1/3Nb2/3)0.7Ti0.3O3(011) heterostructure
We report a giant electric-field control of magnetization (M) as well as magnetic anisotropy in
a Co40Fe40B20 (CoFeB)/Pb (Mg1/3Nb2/3) 0.7 Ti0. 3O3 (PMN-PT) structure at room …
a Co40Fe40B20 (CoFeB)/Pb (Mg1/3Nb2/3) 0.7 Ti0. 3O3 (PMN-PT) structure at room …
Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives
Magnetoelectric composites and heterostructures integrate magnetic and dielectric materials
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …
Antiferromagnetic piezospintronics
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …
Non-volatile ferroelastic switching of the Verwey transition and resistivity of epitaxial Fe3O4/PMN-PT (011)
A central goal of electronics based on correlated materials or 'Mottronics' is the ability to
switch between distinct collective states with a control voltage. Small changes in structure …
switch between distinct collective states with a control voltage. Small changes in structure …