[HTML][HTML] Voltage control of magnetism with magneto-ionic approaches: Beyond voltage-driven oxygen ion migration

J de Rojas, A Quintana, G Rius, C Stefani… - Applied Physics …, 2022 - pubs.aip.org
Magneto-ionics is an emerging field in materials science where voltage is used as an
energy-efficient means to tune magnetic properties, such as magnetization, coercive field, or …

Shear-strain-mediated magnetoelectric effects revealed by imaging

M Ghidini, R Mansell, F Maccherozzi, X Moya… - Nature Materials, 2019 - nature.com
Large changes in the magnetization of ferromagnetic films can be electrically driven by non-
180° ferroelectric domain switching in underlying substrates, but the shear components of …

Nonvolatile magnetoelectric switching of magnetic tunnel junctions with dipole interaction

A Chen, RC Peng, B Fang, T Yang… - Advanced Functional …, 2023 - Wiley Online Library
The magnetoelectric effect is technologically appealing because of its ability to manipulate
magnetism using an electric field rather than magnetic field or current, thus providing a …

Anomalous Hall effect, robust negative magnetoresistance, and memory devices based on a noncollinear antiferromagnetic metal

P Qin, Z Feng, X Zhou, H Guo, J Wang, H Yan… - ACS …, 2020 - ACS Publications
We report the successful fabrication of noncollinear antiferromagnetic D 019 Mn3Ge thin
films on insulating oxide substrates. The anomalous Hall effect and the large parallel …

Bipolar loop-like non-volatile strain in the (001)-oriented Pb(Mg1/3Nb2/3)O3-PbTiO3 single crystals

L Yang, Y Zhao, S Zhang, P Li, Y Gao, Y Yang… - Scientific Reports, 2014 - nature.com
Strain has been widely used to manipulate the properties of various kinds of materials, such
as ferroelectrics, semiconductors, superconductors, magnetic materials and “strain …

Fast 180 magnetization switching in a strain-mediated multiferroic heterostructure driven by a voltage

RC Peng, JM Hu, K Momeni, JJ Wang, LQ Chen… - Scientific reports, 2016 - nature.com
Voltage-driven 180° magnetization switching provides a low-power alternative to current-
driven magnetization switching widely used in spintronic devices. Here we computationally …

Perspective: Magnetoelectric switching in thin film multiferroic heterostructures

PB Meisenheimer, S Novakov, NM Vu… - Journal of Applied …, 2018 - pubs.aip.org
Since the resurgence of multiferroics research, significant advancement has been made in
the theoretical and experimental investigation of the electric field control of magnetization …

Electrical control of magnetism by electric field and current-induced torques

A Fert, R Ramesh, V Garcia, F Casanova… - arXiv preprint arXiv …, 2023 - arxiv.org
While early magnetic memory designs relied on magnetization switching by locally
generated magnetic fields, key insights in condensed matter physics later suggested the …

Tuning the competition between ferromagnetism and antiferromagnetism in a half-doped manganite through magnetoelectric coupling

D Yi, J Liu, S Okamoto, S Jagannatha, YC Chen, P Yu… - Physical review …, 2013 - APS
We investigate the possibility of controlling the magnetic phase transition of the
heterointerface between a half-doped manganite La 0.5 Ca 0.5 MnO 3 and a multiferroic …

Giant piezospintronic effect in a noncollinear antiferromagnetic metal

H Guo, Z Feng, H Yan, J Liu, J Zhang… - Advanced …, 2020 - Wiley Online Library
One of the main bottleneck issues for room‐temperature antiferromagnetic spintronic
devices is the small signal read‐out owing to the limited anisotropic magnetoresistance in …