Memory device with control circuitry for generating a reset signal in read and write modes of operation
M Trivedi, SS Rao, A Goel - US Patent 8,730,750, 2014 - Google Patents
A memory device includes a memory array comprising a plurality of memory cells, a plurality
of sense amplifiers configured to sense data stored in the memory cells of the memory array …
of sense amplifiers configured to sense data stored in the memory cells of the memory array …
Self-timed SRAM for energy harvesting systems
Portable digital systems need to be not just low power but power efficient as they are
powered by low batteries or energy harvesters. Energy harvesting systems tend to provide …
powered by low batteries or energy harvesters. Energy harvesting systems tend to provide …
Sram design with openram in skywater 130nm
J Cirimelli-Low, MH Khan, S Crow… - … on Circuits and …, 2023 - ieeexplore.ieee.org
OpenRAM is an open-source framework for the development of memories with an initial
focus on SRAMs. OpenRAM provides an application interface for netlist, layout, and …
focus on SRAMs. OpenRAM provides an application interface for netlist, layout, and …
Automated synthesis of multi-port memories and control
H Nichols, M Grimes, J Sowash… - 2019 IFIP/IEEE 27th …, 2019 - ieeexplore.ieee.org
High performance systems often employ multi-ported memories to enhance the throughput
and flexibility of the memory. Existing SRAM compilers offer limited control over the SRAM …
and flexibility of the memory. Existing SRAM compilers offer limited control over the SRAM …
Compact measurement schemes for bit-line swing, sense amplifier offset voltage, and word-line pulse width to characterize sensing tolerance margin in a 40 nm fully …
YH Chen, SY Chou, Q Li, WM Chan… - IEEE Journal of solid …, 2012 - ieeexplore.ieee.org
This paper proposes schemes for the direct measurement of bit-line (BL) voltage swing,
sense amplifier (SA) offset voltage, and word-line (WL) pulse width, demonstrated in a 40 …
sense amplifier (SA) offset voltage, and word-line (WL) pulse width, demonstrated in a 40 …
Fine-grain CAM-tag cache resizing using miss tags
M Zhang, K Asanović - Proceedings of the 2002 international symposium …, 2002 - dl.acm.org
A new dynamic cache resizing scheme for low-power CAM-tag caches is introduced. A
control algorithm that is only activated on cache misses uses a duplicate set of tags, the miss …
control algorithm that is only activated on cache misses uses a duplicate set of tags, the miss …
A 5nm wide voltage range ultra high density sram design for L2/L3 cache applications
S Enjapuri, D Gujjar, S Sinha, R Halli… - … Conference on VLSI …, 2021 - ieeexplore.ieee.org
The paper presents SRAM cache design in 5nm FinFET technology for L2/L3 cache
applications, demonstrating circuit techniques to enable wide-range DVFS (Dynamic …
applications, demonstrating circuit techniques to enable wide-range DVFS (Dynamic …
Circuit and method for optimizing memory sense amplifier timing
JD Burnett, AB Hoefler - US Patent 7,733,711, 2010 - Google Patents
(57) ABSTRACT A memory has an array of memory cells, a word line driver, a sense
amplifier, and a sense enable circuit. Each memory cell has a coupling transistor for …
amplifier, and a sense enable circuit. Each memory cell has a coupling transistor for …
A Novel Decoder Design for Logic Computation in SRAM: CiM-SRAM
K Monga, S Aggarwal, N Chaturvedi… - 2021 IEEE 18th India …, 2021 - ieeexplore.ieee.org
Computing-in-Memory is an emerging paradigm that promises to accelerate data-intensive
computation by eliminating the back and forth data movement between the memory and …
computation by eliminating the back and forth data movement between the memory and …
A sub-200-mV voltage-scalable SRAM with tolerance of access failure by self-activated bitline sensing
SC Luo, LY Chiou - IEEE Transactions on Circuits and Systems …, 2010 - ieeexplore.ieee.org
The access timing control of low-voltage static random access memory cells encounters
crucial challenges in the presence of within-die (WID) variations, which induce severe delay …
crucial challenges in the presence of within-die (WID) variations, which induce severe delay …