Memory device with control circuitry for generating a reset signal in read and write modes of operation

M Trivedi, SS Rao, A Goel - US Patent 8,730,750, 2014 - Google Patents
A memory device includes a memory array comprising a plurality of memory cells, a plurality
of sense amplifiers configured to sense data stored in the memory cells of the memory array …

Self-timed SRAM for energy harvesting systems

A Baz, D Shang, F Xia… - Journal of low power …, 2011 - ingentaconnect.com
Portable digital systems need to be not just low power but power efficient as they are
powered by low batteries or energy harvesters. Energy harvesting systems tend to provide …

Sram design with openram in skywater 130nm

J Cirimelli-Low, MH Khan, S Crow… - … on Circuits and …, 2023 - ieeexplore.ieee.org
OpenRAM is an open-source framework for the development of memories with an initial
focus on SRAMs. OpenRAM provides an application interface for netlist, layout, and …

Automated synthesis of multi-port memories and control

H Nichols, M Grimes, J Sowash… - 2019 IFIP/IEEE 27th …, 2019 - ieeexplore.ieee.org
High performance systems often employ multi-ported memories to enhance the throughput
and flexibility of the memory. Existing SRAM compilers offer limited control over the SRAM …

Compact measurement schemes for bit-line swing, sense amplifier offset voltage, and word-line pulse width to characterize sensing tolerance margin in a 40 nm fully …

YH Chen, SY Chou, Q Li, WM Chan… - IEEE Journal of solid …, 2012 - ieeexplore.ieee.org
This paper proposes schemes for the direct measurement of bit-line (BL) voltage swing,
sense amplifier (SA) offset voltage, and word-line (WL) pulse width, demonstrated in a 40 …

Fine-grain CAM-tag cache resizing using miss tags

M Zhang, K Asanović - Proceedings of the 2002 international symposium …, 2002 - dl.acm.org
A new dynamic cache resizing scheme for low-power CAM-tag caches is introduced. A
control algorithm that is only activated on cache misses uses a duplicate set of tags, the miss …

A 5nm wide voltage range ultra high density sram design for L2/L3 cache applications

S Enjapuri, D Gujjar, S Sinha, R Halli… - … Conference on VLSI …, 2021 - ieeexplore.ieee.org
The paper presents SRAM cache design in 5nm FinFET technology for L2/L3 cache
applications, demonstrating circuit techniques to enable wide-range DVFS (Dynamic …

Circuit and method for optimizing memory sense amplifier timing

JD Burnett, AB Hoefler - US Patent 7,733,711, 2010 - Google Patents
(57) ABSTRACT A memory has an array of memory cells, a word line driver, a sense
amplifier, and a sense enable circuit. Each memory cell has a coupling transistor for …

A Novel Decoder Design for Logic Computation in SRAM: CiM-SRAM

K Monga, S Aggarwal, N Chaturvedi… - 2021 IEEE 18th India …, 2021 - ieeexplore.ieee.org
Computing-in-Memory is an emerging paradigm that promises to accelerate data-intensive
computation by eliminating the back and forth data movement between the memory and …

A sub-200-mV voltage-scalable SRAM with tolerance of access failure by self-activated bitline sensing

SC Luo, LY Chiou - IEEE Transactions on Circuits and Systems …, 2010 - ieeexplore.ieee.org
The access timing control of low-voltage static random access memory cells encounters
crucial challenges in the presence of within-die (WID) variations, which induce severe delay …