All-GaN-integrated cascode heterojunction field effect transistors
All-GaN-integrated cascode heterojunction field effect transistors were designed and
fabricated for power switching applications. A threshold voltage of+ 2 V was achieved using …
fabricated for power switching applications. A threshold voltage of+ 2 V was achieved using …
Investigation of recessed gate AlGaN/GaN MIS-HEMTs with double AlGaN barrier designs toward an enhancement-mode characteristic
In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility
transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated …
transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated …
Study of the leakage current suppression for hybrid-Schottky/ohmic drain AlGaN/GaN HEMT
C Tang, G Xie, K Sheng - Microelectronics Reliability, 2015 - Elsevier
The leakage current suppression mechanism in AlGaN/GaN High Electron Mobility
Transistors (HEMTs) is investigated. It is known that leakage current can cause severe …
Transistors (HEMTs) is investigated. It is known that leakage current can cause severe …
Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment
Q Si, H Yue, M Xiaohua, X Yuanbin… - Journal of …, 2009 - iopscience.iop.org
The fabrication of enhancement-mode AlGaN/GaN HEMTs by fluorine plasma treatment on
sapphire substrates is reported. A new method is used to fabricate devices with different …
sapphire substrates is reported. A new method is used to fabricate devices with different …
Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4 as the gate dielectric
T Gao, R Xu, K Zhang, Y Kong, J Zhou… - Semiconductor …, 2015 - iopscience.iop.org
We have investigated dual-gate AlGaN/GaN metal-insulator-semiconductor high-electron
mobility transistors (MIS-HEMTs) using Si 3 N 4 as the gate dielectric by comparison with …
mobility transistors (MIS-HEMTs) using Si 3 N 4 as the gate dielectric by comparison with …
Gate stacked dual-gate MISHEMT with 39 THz· V Johnson's figure of merit for V-band applications
In this investigation, extensive simulations were performed for an AlGaN/GaN Dual-Gate
MISHEMT configuration using ATLAS TCAD to optimize the device design for high power …
MISHEMT configuration using ATLAS TCAD to optimize the device design for high power …
AlGaN/GaN based enhancement mode MOSHEMTs
A Banerjee - 2010 - theses.gla.ac.uk
This thesis describes a new gallium nitride (GaN) based transistor technology for electronic
switching applications. Conventional GaN based transistors are of the high electron mobility …
switching applications. Conventional GaN based transistors are of the high electron mobility …