In this work, we investigated the influence of the cell pitch, opening width, Ga/(In+ Ga) ratio,
absorber layer thickness, and doping on ultrathin CIGS solar cell performance by using …

An appropriate gallium (Ga) back gradient in Cu (In, Ga) Se2 (CIGS) films is vital to achieve
solar cells with good device performances. As a steeper Ga back gradient can induce an …

Abstract (Ag, Cu)(In, Ga) Se 2 thin films deposited by a three-stage co-evaporation process
have shown potential as mid-and wide-bandgap absorber materials for solar cell devices …

Graded band gap chalcopyrite solar cells are fabricated based on an all solution
processable synthesis method with the aid of electrophoretic deposition and a superstrate …

Cu (In, Ga) Se 2 thin-film solar cells with Ga-graded absorber layers and a [Cu]/([In]+[Ga])
ratio varying between 0.5 and 1.0 were prepared by coevaporation and investigated. Except …

Band-edge effects—including grading, electrostatic fluctuations, bandgap fluctuations, and
band tails—affect chalcogenide device efficiency. These effects now require more careful …

We performed modeling and simulation of Cu (In, Ga) Se 2 (CIGS) thin film solar cell, using
SCAPS-1D device simulator, and we especially investigated the influence of absorber back …

A low-toxic selenization with post gallium diffusion (PGD) treatment has been demonstrated
to increase the bandgap in the surface Cu (In, Ga) Se 2 (CIGSe) absorbers and to form …

The effect of Cu (In, Ga) Se2 (CIGS) with V‐shaped bandgap on device performance is
investigated in detail. A series of Ga/(In+ Ga) ratio are set to study the influence of V‐shaped …

Cu (In, Ga) Se 2 films are used as absorber layers in chalcopyrite thin film solar cells. As the
gallium concentration in the absorber can be used to control the band gap, there have been …