Abstract Cu (In, Ga)(S, Se) 2 or CIGS is a thin-film semiconductor that has shown a device
efficiency of 23.35% and 24.2% for single-junction and perovskite/CIGS tandem solar cells …

The worrying progression of climate change is urging for scientists and engineers to rapidly
deploy renewable energy technologies and to develop pedagogic methods to explain to the …

The advancement of low-cost, highly efficient solar cell devices is a major technological
challenge demanding suitable materials and fabrication processes. Polycrystalline Cu (In …

Thin film solar cells based on chalcopyrite Cu (In, Ga) Se 2 (CIGSe) absorber layers were
fabricated successfully using a three-stage co-evaporation process. The effects of annealing …

In recent years considerable attention has been paid to research and develop wide
bandgap solar cells. The wide bandgap cells have a better solar cell temperature coefficient …

The influence of selenium background pressure during post-deposition annealing of Cu (In,
Ga) Se2 (CIGS) is investigated. Solar cells made from samples post-annealed with selenium …

To explain the persistence of stable Ga gradients inside thin-film Cu (In, Ga) Se 2 absorber
layers, we propose to consider the inter-diffusion of In and Ga inside those layers and the …

The morphology and photovoltaic properties of the solution-based Cu (In, Ga) Se 2 films are
effectively improved via the incorporation of copper-indium back-end layers in the precursor …

The operational efficiency of compound semiconductors regularly depends on their local
elemental composition and on the spatial distribution of contained elements. To optimize the …