Next-generation integrated circuit devices based on transition-metal-oxides are expected to
boast a variety of extraordinary properties, such as superconductivity, transparency in the …

Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and optoelectronic device applications. As informed device design requires a firm …

Dense interband electronic excitations on the order of 0.2 electron-hole pairs per nm 3 are
encountered in a number of circumstances of fundamental and practical significance. We …

In this paper, we describe the state of the art in the numerical simulation of the carrier
transport properties of GaN and its ternary alloys. We outline the characteristics of our state …

We numerically calculate the wave function of two-dimensional electron gas (2DEG) for use
in 2DEG transport theory and study the electron transport in ZnMgO/ZnO heterostructures …

Wide energy gap semiconductors are broadly recognized as promising materials for novel
electronic and opto-electronic device applications. As informed device design requires a firm …

2-D numerical simulation is employed to assess a number of possible design approaches
aimed at optimizing the internal quantum efficiency (IQE) of ZnO-based light-emitting diodes …

The impact of hydrogen in ZnO is revealed by combining reaction dynamics calculations
with temperature dependent Hall (TDH), photoluminescence, and secondary ion mass …

Carrier and lattice relaxation after optical excitation is simulated for the prototypical wide-
bandgap semiconductors CuI and ZnO. Transient temperature dynamics of electrons, holes …

The electric field dependence of the electron mobility in bulk wurtzite zinc oxide (ZnO)
material is studied. The low-field electron mobility is calculated as a function of doping …